Phosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films

Abstract

We report n-type conductivity in phosphorus ion implanted ultrananocrystalline diamond films annealed at 800 °C and above. The amorphous carbon transits to diamond with an increase of stress after 900 °C annealing, which exhibits lower resistivity with Hall mobility of 143 cm2/Vs. After 1000 °C annealing, the diamond transits to amorphous carbon with the stress release, which has higher carrier concentration and lower Hall mobility. Both P+-implanted nano-sized diamond grains and amorphous carbon give contributions to the n-type conductivity in the films. The microstructure evolution and electrical properties are relative to the hydrogen diffusion and desorption under high temperature annealing.

The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation and annealing process-dosage effect

“…[10][11][12][13] However, N 2 incorporation via the addition of N 2 gas to the growth plasma requires high growth temperature (700°C) [13]. On the other hand, ion implantation has long been utilized to amend the properties of materials through controlled doping, using select dopants [14][15][16][17]. Recent reports show that oxygen and phosphorous ion implantation result in the n-type conductivity of the UNCD films [16,17].…”

“…On the other hand, ion implantation has long been utilized to amend the properties of materials through controlled doping, using select dopants [14][15][16][17]. Recent reports show that oxygen and phosphorous ion implantation result in the n-type conductivity of the UNCD films [16,17]. But the possible contribution on the electrical properties of the films related to the modification of granular structure has not been well explained yet.…”

Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates

“…The Au-HGD/Au(Si) films exhibit high electrical conductivity of r Au-HGD/Au(Si) ¼ 5076.0 (X cm) À1 with the sheet carrier concentration of n e ¼ 9.9 Â 10 18 cm À2 and mobility of l e ¼ 130.0 cm 2 /V s, which are superior than those of other conducting diamond films reported in literature (see Table I). 18,[23][24][25][26][27][28] In contrast, the HGD/Au(Si) films possess lower r-value of 207.2 (X cm) À1 (n e ¼ 3.6 Â 10 17 cm À2 and l e ¼ 0.85 cm 2 /V s), whereas the Au-HGD/Si films possess the r-value lower than that of the Au-HGD/Au(Si) films, i.e., r Au-HGD/(Si) ¼ 828.4 (X cm) À1 (n e ¼ 3.2 Â 10 18 cm À2 and l e ¼ 75.8 cm 2 /V s). Apparently, the multienergy Au-ion implantation process is the main factor, which converts the HGD films into highly conducting diamond films.…”

“…Consequently, the Au-HGD/Au(Si) films exhibit a far more efficient FEE behavior, viz., lower E 0 , higher J and longer lifetime as compared with the other conducting diamond based field emitters, which are summarized in Table I. 18,[23][24][25][26][27][28] The TEM examination has been carried out to elucidate the source of enhancement on the electrical conductivity and the FEE behavior of the Au-HGD/Au(Si) films. Fig.…”

The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect

“…13 On the other hand, ion implantation has long been utilized to amend the properties of materials through controlled doping, using select dopants. [14][15][16][17] Recent reports show that oxygen and phosphorous ion implantations result in n-type conductivity of UNCD films. 16,17 But the possible cause for such a modification of the granular structure has not been well explained yet.…”