Phosphorus-doped nanocrystalline silicon-oxycarbide thin films

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiOxCy:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

“…Furthermore, for the film prepared at T S = 170 °C, the Si–H stretching mode vibration bands are deconvoluted in three components, namely, SiH mono-hydride stretching (∼2000 cm –1 ), Si–H–Si plate-like stretching (∼2050 cm –1 ), and SiH 2 di-hydrate stretching (∼2100 cm –1 ), as presented in Figure h. The relative strengths of the SiH 2 and Si–H–Si platelet-like stretching modes in the matrix are determined by the microstructure factor ( R ) and the surface passivation index ( S ), respectively, and these are defined as , where I represents the integrated intensity of the corresponding peak. The SiH 2 mode generally shows the existence of voids, defects, and the dangling bonds.…”

“…In this regard, a thin-film silicon solar cell is a great choice where the few thin layers of Si and its composite material are used to make an efficient solar cell at a low cost . The utilization of a broad spectrum of solar energy typically requires a wide band gap window layer to permit its extensive portion to reach the absorber layers of the solar cells at maximum intensities − and also a narrow band gap absorber layer to consume the infrared part of the solar spectrum. , In the past, several studies were carried out on the nanocrystalline silicon oxide and silicon carbide thin films, which were found promising for their wide band gaps and good conductivities via involving Si nanocrystals (Si-ncs). , Apart from this, nanocrystalline silicon oxy-carbide (nc-Si/a-SiO x C y or nc-SiO x C y ) films, in which silicon nanocrystals (Si-ncs) are embedded in the amorphous silicon oxy-carbide (a-SiO x C y ) matrix, are also an attractive material for the window layer of Si solar cells . The barrier height of a-SiC (2.5 eV) being significantly lower than a-SiO (9 eV), the SiO x C y matrix, with an intermediate barrier height, could allow an easy flow of electrons. , On the other hand, the oxygen in the matrix helps form Si-ncs in the amorphous matrix via thermodynamically optimum phase separation and high stability of the amorphous phase.…”

Delicate and Fast Photochemical Surface Modification of 2D Photoresponsive Organosilicon Metal–Organic Frameworks

“…XPS spectra of eTSiMOF-7h were deconvoluted and explicitly showed two new peaks shifting positively to 102-103 eV which were assignable to the bonding of SiÀ O (Figure S24). [18] In addition, considering the converted hydrophilicity, it is rational to deduce that the superficial Si(TMS) 2 groups have been partially cleaved to generate hydrophilic SiÀ OH groups (Figure 2). The FT-IR spectra of eTSiMOF-7h possessed an iconic broad peak at 3347 cm À 1 strongly supported this deduction (Figure 4a).…”

Defective structure of doped carbons obtained from preceramic polymers through Cl2‐ and NH3‐assisted thermolysis

“…Phosphorus‐doped SiC:H films present optical bandgaps comprising between 1.9 and 2.9 eV as the amount of P increases in the material 68 . Both the increased amount of the Si–C bonds and the incorporation of the P atoms lead to the enhancement of the optical bandgap 69 . In silica glasses, their optical characteristics are directly dependent on the changes of the oxygen bindings leading to the formation of NBO.…”

“…68 Both the increased amount of the Si-C bonds and the incorporation of the P atoms lead to the enhancement of the optical bandgap. 69 In silica glasses, their optical characteristics are directly dependent on the changes of the oxygen bindings leading to the formation of NBO. Higher energy is required to excite an electron from a bridging oxygen than from an NBO.…”