1974
DOI: 10.1149/1.2401981
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Phosphorus Diffusion in Partially Crystallized Films of SiO[sub 2]

Abstract: The diffusion of phosphorus into thin SiO2 films on Si was studied to assess the significance of an anomalous, rapid diffusion mode. Diffusions were performed over a wide range of temperature and time using neutron‐activated, red phosphorus diffusion sources. It was found that diffusion anneals in P vapors catalyzed a localized amorphous‐to‐crystalline transformation in the initially amorphous films, creating rapid diffusion paths at the interfaces between the crystalline islands and the surrounding amorphou… Show more

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Cited by 9 publications
(6 citation statements)
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“…5. Coefficients of phosphorus diffusion in amorphous SiO 2 according to [10][11][12][13][14][15], in comparison with the present study for 10, 2 and 0 mol% P 2 O 5 .…”
Section: Discussionsupporting
confidence: 64%
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“…5. Coefficients of phosphorus diffusion in amorphous SiO 2 according to [10][11][12][13][14][15], in comparison with the present study for 10, 2 and 0 mol% P 2 O 5 .…”
Section: Discussionsupporting
confidence: 64%
“…The investigation on MCVD fibers [15] yields an activation energy which is the smallest value reported [10][11][12][13][14][15], and by no means comparable with our results. In detail, three sets of experiments have been carried out, which are displayed in Fig.…”
Section: Discussionsupporting
confidence: 46%
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