2004
DOI: 10.1016/j.jnoncrysol.2004.08.028
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Diffusion of phosphorus doped silica for active optical fibers

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Cited by 11 publications
(9 citation statements)
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“…Diffusivities of both Al and P in silica are strong functions of concentration 88–90 . Between 0 and 10 mol% P 2 O 5 , the P diffusion coefficient (extrapolated to 1200°C) increases by nearly four orders of magnitude 88 .…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Diffusivities of both Al and P in silica are strong functions of concentration 88–90 . Between 0 and 10 mol% P 2 O 5 , the P diffusion coefficient (extrapolated to 1200°C) increases by nearly four orders of magnitude 88 .…”
Section: Discussionmentioning
confidence: 99%
“…Thus, P from the monazite coatings on top of the growing SiO 2 layer 7,12 and Al from the fiber/SiO 2 interface can be expected to diffuse toward each other due to the gradient of chemical potential. As the diffusion coefficient of Al in silica glass at 1200°C is nearly an order of magnitude higher than that of P 66,88–90 (Table IV), Al should diffuse outward and segregate in an Al/P‐rich layer on top of the oxide scale. As discussed above, even a fraction of a monolayer of aluminum on a silicon surface can retard oxidation 84–86 .…”
Section: Discussionmentioning
confidence: 99%
“…Dopant diffusion has been evaluated during MCVD processing of silica preforms with various dopants [5,6,8,13]. The basic concepts developed there will be applied to the fiber drawing process.…”
Section: Thermodynamical Kinetic and Geometrical Approximationsmentioning
confidence: 99%
“…While in case of stacks of undoped silica rods the simultaneous sintering and stretching faces no problems in terms of bubble formation or geometrical deformation, the use of doped silica rods or canes induces structural defects by gas phase reactions during thermal processing. A few papers [5,6,7,8,9] studied the diffusion of fluorine, germanium and other dopants during preparation of doped silica preforms and fiber drawing. High temperature and long process time cause flattening or broadening of dopant profiles.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, diffusion coefficients in the system cP 2 O 5 @ (100-c)@SiO 2 have been determined at temperatures between 1700°C and 2000°C and in a concentration range c between 0 and 10 mol% P 2 O 5 [12]. Our modeling is grounded on these data, however, we will extrapolate the values of diffusion coefficients beyond the experimentally covered region concerning both temperature and concentration which seems not unreasonable because the results of [12] could be well described by a close formula …”
Section: Modeling Of Phosphorus Diffusion During Mcvd Deposition and mentioning
confidence: 99%