Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing

Mathiot, D.; Lachiq, A.; Slaoui, A.; Noël, S.; Müller, Jean-Claude; Dubois, Christophe

doi:10.1016/s1369-8001(98)00045-6

Cited by 33 publications

(18 citation statements)

References 13 publications

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“…Dilution with methanol was previously reported to control viscosity and thickness of spin-on dopant films. 31) Five solutions with SOD-to-IPA volume ratios of 1:1, 1:2, 1:5, and 1:10 were prepared, and the solutions were span-coated on the GOI samples at 3000 rpm. Resulting film thicknesses varied, accordingly, 5 as shown in Fig.…”

Section: Process Optimizationmentioning

confidence: 99%

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Al-Attili

Kako

Husain

et al. 2015

Jpn. J. Appl. Phys.

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High electron doping of germanium (Ge) is considered to be an important process to convertGe into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting crystalline qualities over other methods such as ion implantation and in-situ doping during material growth. However, a standard spin-on doping recipe satisfying these requirements is not yet available. In this paper we examine spin-on doping of Ge-on-insulator (GOI) wafers. Several issues were identified during the spin-on doping process and specifically the adhesion between Ge and the oxide, surface oxidation during activation, and the stress created in the layers due to annealing. In order to mitigate these problems, Ge disks were first patterned by dry etching followed by spin-on doping.Even by using this method to reduce the stress, local peeling of Ge could still be identified by optical microscope imaging. Nevertheless, most of the Ge disks remained after the removal of the glass. According to the Raman data, we could not identify broadening of the lineshape which shows a good crystalline quality, while the stress is slightly relaxed. We also determined the linear increase of the photoluminescence intensity by increasing the optical pumping power for the doped sample, which implies a direct population and recombination at the gamma valley.2

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Section: Process Optimizationmentioning

confidence: 99%

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Al-Attili

Kako

Husain

et al. 2015

Jpn. J. Appl. Phys.

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“…But this method often results in junctions, which are too deep for applications requiring shallow p-n junctions. Rapid thermal annealing (RTA) using various dopant sources, such as planar dopants or doped spin-on film (SOF), has been developed for the fabrication of shallow p-n junction solar cells [12,13,3,[14][15][16][17][18][19][20]. In addition, anti-reflective coatings (ARCs) are commonly used to improve the efficiency of solar cells by reducing reflectivity at the airsemiconductor interface.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO2/graded index TiO2 anti-reflective coating

Lee

Yeh

2015

Applied Surface Science

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“…On one hand, the RTP process is widely used for the crystallization of amorphous silicon on glass for solar cells and thin film transistors (TFTs) applications [1][2][3][4][5]. On the other hand, RTP on polycrystalline silicon materials can also be used to reduce the point defects present in the poly-Si layers and to activate the dopant elements [1,2,[6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Laser annealing of thin film polycrystalline silicon solar cell

Chowdhury

Bahouka

Steffens³

et al. 2013

EPJ Photovolt.

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Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.

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Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing

Cited by 33 publications

References 13 publications

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO2/graded index TiO2 anti-reflective coating

Laser annealing of thin film polycrystalline silicon solar cell

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