Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

Abstract

Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires.

Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques

“…First, in the case of ZnO heteroepitaxy on a different substrate, the strain relieve may be expected in nanostructures, thus reducing the influence of lattice mismatch; second, possible quantum confinement may be observed in nanosized ZnO objects, which may enhance radiative recombination; third, from nanostructures of certain morphology with increased surface area and therefore, reduced reflection at the air-semiconductor interface, better light extraction may be expected. Finally, photonic crystal effects may be expected in carefully arranged periodic arrays of nanostructures [14]. All these stimulated a significant interest in ZnO nanostructures in the last decade.…”

Lithium doping and photoluminescence properties of ZnO nanorods

“…It is well known that the doping of semiconductors with selective elements affects their electrical, optical, and magnetic properties 4,5 significantly. There are numerous studies about different kinds of doping materials as a donor in ZnO nanomaterials to obtain high quality n-type ZnO nanomaterials in literature, [6][7][8] but an important challenge that needs to be prevail for the realization of most ZnO based devices is the fabrication of p-type material. One of the main difficulties is the self-compensation of ZnO as semiconductor, which results in by a high background electron concentration in the material.…”

One-Dimensional Zinc Oxide Nanomaterials for Application in High-Performance Advanced Optoelectronic Devices

“…Various fabrication methods of 1D ZnO nanomaterials have been developed, such as vapor transport [5], hydrothermal reaction [8,11,16,22], electrodeposition [12,23], chemical vapor deposition (CVD) [24,25], molecular beam epitaxy [26], and pulsed laser deposition [27]. These methods can be used to obtain samples on substrates such as Si, quartz, and sapphire.…”