Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

Min, Daehong; Park, Donghwy; Jang, Jongjin; Lee, Kyu-Seung; Nam, Okhyun

doi:10.1038/srep17372

Cited by 14 publications

(10 citation statements)

References 23 publications

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“…Nevertheless, these methods have several disadvantages such as stokes shift energy loss, relatively short life-time, and long-term reliability of the phosphors 2 . To solve these problems, the concept of monolithic full-color InGaN LEDs without covering any phosphors has been proposed 6 7 8 9 10 . Nguyen et al successfully demonstrated the fabrication of full-color LED emitting in GaN-based a dot-in-a-wire nano-structure on Si(111) 6 7 .…”

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confidence: 99%

“…Nguyen et al successfully demonstrated the fabrication of full-color LED emitting in GaN-based a dot-in-a-wire nano-structure on Si(111) 6 7 . Min et al reported visible-color LEDs achieved by using InGaN/GaN multiple quantum wells (MQWs) formed on GaN nanostructures 8 . Shon et al showed the full-color InGaN-based LEDs on amorphous substrates by pulsed sputtering 9 .…”

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confidence: 99%

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Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

Kang

et al. 2016

Sci Rep

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We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength range. A color temperature of 3370 K and a color rendering index of 69.3 have been achieved. Temperature-dependent photoluminescence measurements reveal a strong carriers localization effect of the InGaN QDs layer by obvious blue-shift of emission peak from 50 K to 300 K. The broadband luminescence spectrum is believed to be attributed to the injected carriers captured by the different localized states of InGaN QDs with various sizes, shapes and indium compositions, leading to a full visible color emission. The successful realization of our broadband InGaN QDs LEDs provide a convenient and practical method for the fabrication of GaN-based monolithic full-color LEDs in wafer scale.

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confidence: 99%

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confidence: 99%

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

Kang

et al. 2016

Sci Rep

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“…Secondly, 3D GaN structures have multi‐facets. On the multi‐facet structure, the InGaN layer has variations in thickness and indium compositions, due to the different diffusivities of the indium and gallium adatoms at each facet . As InGaN QDs are formed from the InGaN layer to relax the stress between the InGaN/GaN interface, the difference in the structural, compositional and optical properties of InGaN QDs formed on each facet will be larger than those of the InGaN layer.…”

Section: Introductionmentioning

confidence: 55%

Growth mechanism of InGaN nanodots on three‐dimensional GaN structures

Park

Min

Nam

2017

Physica Rapid Research Ltrs

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In this study, we investigated the growth mechanism of indium gallium nitride (InGaN) nanodots (NDs) and an InGaN layer, which were simultaneously formed on a three‐dimensional (3D) gallium nitride (GaN) structure, having (0001) polar, (11‐22) semi‐polar, and (11‐20) nonpolar facets. We observed the difference in the morphological and compositional properties of the InGaN structures. From the high resolution transmission electron microscopy (HR‐TEM) images, it can be seen that the InGaN NDs were formed only on the polar and nonpolar facets, whereas an InGaN layer was formed on the semi‐polar facet. The indium composition variation in all the InGaN structures was observed using scanning transmission electron microscopy (STEM) and the energy dispersive X‐ray spectroscopy (EDS). The different growth mechanism can be explained by two reasons: (i) The difference in the diffusivities of indium and gallium adatoms at each facet of 3D GaN structure; and (ii) the difference in the kinetic Wulff plots of polar, semi‐polar, and nonpolar GaN planes.

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“…In recent years, GaN-based white LEDs have received much attention and been widely used in solidstate lighting [1]- [3]. The LEDs have many advantages including small size, energy conservation, long lifetime, low power consumption, high efficiency and so on, which also can be used as the next generation light sources to replace the standard incandescent lamps [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

Phosphor-Free Three-Dimensional Hybrid White LED With High Color-Rendering Index

Zhao

Wei

et al. 2019

IEEE Photonics J.

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In this study, we demonstrate the phosphor-free hybrid white LED devices with the combination of the truncated-hexagonal-pyramid (THP) structures and quantum dots (QDs) (THPQD). In the THP structures, it is noted that the broad spectrum can be obtained from different microfacets. Moreover, the THP structures make the far-field viewing angle decrease by ∼45.4°and improve the light extraction efficiency compared with the traditional LED. The simulations also show that the light extraction efficiency of the THP LED is as approximately seven times as high as that of the traditional LED. Furthermore, by controlling the selective area growth (SAG) and adding QDs, the white emission can be realized from the THPQD LED with high color-rendering index (CRI). The CRI of the THPQD LED is from 71.2 up to 87.2 with the change of driving different current and its correlated color temperature covers the scope from 4845 to 5877 K.

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Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

Cited by 14 publications

References 23 publications

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

Growth mechanism of InGaN nanodots on three‐dimensional GaN structures

Phosphor-Free Three-Dimensional Hybrid White LED With High Color-Rendering Index

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