2021
DOI: 10.1021/acsnano.1c00020
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Phononics of Graphene Interfaced with Flowing Ionic Fluid: An Avenue for High Spatial Resolution Flow Sensor Applications

Abstract: While ionic flow over graphenic structures creates electromotive potential, there is a need to understand the local carrier density induced in graphene without any electrode-induced Fermi-level pinning. Here, we show the electrolyte-flow induced localized doping in graphene via inspecting its Raman phononic energy. Graphene’s Fermi energy level has a logarithmic dependence to the flow velocity over 2 orders of magnitude of velocity (∼100 μm s–1 to 10 mm s–1). A theoretical model of the electric double layer (E… Show more

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Cited by 10 publications
(8 citation statements)
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References 32 publications
(115 reference statements)
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“…Since graphene has a monatomic thickness, these peaks are highly sensitive to its structural, electronic, and interfacial properties. 18 In particular, Raman peak positions correlate strongly with its doping level represented by the concentration of charge carriers in graphene (dopants/cm 2 ). 19 …”
mentioning
confidence: 99%
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“…Since graphene has a monatomic thickness, these peaks are highly sensitive to its structural, electronic, and interfacial properties. 18 In particular, Raman peak positions correlate strongly with its doping level represented by the concentration of charge carriers in graphene (dopants/cm 2 ). 19 …”
mentioning
confidence: 99%
“…Among the available phononic modes (D, D′, G, 2D, and 2D′), graphene’s properties are predominantly represented by the following three phonon vibrational modes: D-band peak (intervalley phonon) near 1350 cm –1 , G-band peak (E 2g , primary in-plane vibrational mode) around 1580 cm –1 , and 2D-band peak (second-order overtone of a different in-plane vibrational mode) at about 2670 cm –1 (peak positions are for a 532 nm incident laser). Since graphene has a monatomic thickness, these peaks are highly sensitive to its structural, electronic, and interfacial properties . In particular, Raman peak positions correlate strongly with its doping level represented by the concentration of charge carriers in graphene (dopants/cm 2 ) …”
mentioning
confidence: 99%
“…A variety of 2D FET sensors were fabricated to monitor liquid flow rate and velocity. The flow sensing mechanism based on hydrodynamic doping can be explained by ionic concentration changes in electric double layer models. In 2012, He et al realized flow velocity detection using a solution-gate GFET sensor integrated with microfluidic systems.…”
Section: Physical Sensorsmentioning
confidence: 99%
“…Furthermore, they also demonstrated the linear relation between the flow rate and the local stream potential. In 2021, Yazdi and co-workers developed a differential electrolyte-gated GFET for investigating interactions between the graphene and flowing ionic fluid (Figure a) . Owing to the hydrodynamic doping effect, the graphene Fermi energy shifts climb logarithmically with increasing flow rate.…”
Section: Physical Sensorsmentioning
confidence: 99%
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