Phonon properties and doping of Zn_1–xMn_xSe epilayers grown by molecular‐beam epitaxy

Abstract

We present far-infrared (FIR) reflection studies for Zn 1-x Mn x Se. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate-mode behavior for the optical phonon modes in Zn 1-x Mn x Se. In addition to the known ZnSe-like and MnSe-like phonon resonances a weak defect-related feature 'D' is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent red-shift. Furthermore, the observation of a drastic reduction in the free-electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn-related defect complexes.