2015
DOI: 10.1103/physrevlett.114.016804
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Phonon-Mediated Electron Transport through CaO Thin Films

Abstract: Scanning tunneling microscopy has developed into a powerful tool for the characterization of conductive surfaces, for which the overlap of tip and sample wave functions determines the image contrast. On insulating layers, as the CaO thin film grown on Mo(001) investigated here, direct overlap between initial and final states is not enabled anymore and electrons are transported via hopping through the conduction-band states of the oxide. Carrier transport is accompanied by strong phonon excitations in this case… Show more

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Cited by 19 publications
(30 citation statements)
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“…We found that the 2D-CaO(100) have a direct band gap of 2.03 eV while bulk CaO, with cubic rocksalt structure, exhibits insulator behavior with a wide band gap of 7.7 eV. 42,43 This is consistent with experimentally observed decrease in the band gap of CaO thin-film 44,45 , i.e. Cui et.al have found the band gap of CaO thin-film grown on Mo(100) to be 7.1 eV using a low-temperature scanning tunneling microscopy technique.…”
Section: B Caosupporting
confidence: 85%
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“…We found that the 2D-CaO(100) have a direct band gap of 2.03 eV while bulk CaO, with cubic rocksalt structure, exhibits insulator behavior with a wide band gap of 7.7 eV. 42,43 This is consistent with experimentally observed decrease in the band gap of CaO thin-film 44,45 , i.e. Cui et.al have found the band gap of CaO thin-film grown on Mo(100) to be 7.1 eV using a low-temperature scanning tunneling microscopy technique.…”
Section: B Caosupporting
confidence: 85%
“…Cui et.al have found the band gap of CaO thin-film grown on Mo(100) to be 7.1 eV using a low-temperature scanning tunneling microscopy technique. 44 Notice here our finding (2.03 eV) is for a monolayer of CaO which is very thinner than those thin-film studied in refs. 44,45 .…”
Section: B Caocontrasting
confidence: 51%
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“…Accordingly, atomic resolution could be achieved only in this thickness range. For thicker films (up to 50 ML) relevant for doping, electron hopping was identified as the dominant transport mechanism for electrons through the dielectric layer [6]. Our setup is equipped with an optical readout that enables the collection of photons from the tip-sample junction and their detection with a charge-coupled device unit outside the vacuum chamber.…”
Section: Methodsmentioning
confidence: 99%
“…Recently, it has been proposed based on a low-temperature STM experiments that carrier transport in Mo supported CaO thin film is accompanied by strong phonon excitations [14]. Interestingly, phonon excitations showed various oscillating signals in the differential conductance (dI /dV ) depending on the thickness of CaO film.…”
Section: Introductionmentioning
confidence: 99%