2003
DOI: 10.1002/pssb.200303155
|View full text |Cite
|
Sign up to set email alerts
|

Phonon‐induced damping of Rabi oscillations in semiconductor quantum dots

Abstract: The phonon-induced dephasing dynamics of semiconductor quantum dots during nonlinear optical excitation is studied using quantum kinetic equations. We find that despite the decoherence process Rabi oscillations occur even for relatively long pulse durations and that their signatures in pump-probe experiments only get suppressed for high input pulse areas.1 General remarks Rabi oscillations are the results of the coherent interplay of level occupation filling and the optical polarization dynamics during nonline… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
44
0

Year Published

2009
2009
2020
2020

Publication Types

Select...
6
2
1

Relationship

4
5

Authors

Journals

citations
Cited by 53 publications
(44 citation statements)
references
References 12 publications
0
44
0
Order By: Relevance
“…However, the observed "flopping" behaviour is heavily damped, since semiconductor QDs suffer from the usual solid-state problems of environment-induced decoherence [24][25][26][27]. Decoherence has a major influence in the indistinguishable nature of the emitted photons, and is one of the biggest obstacles to overcome in realizing quantum information processing.…”
Section: Introductionmentioning
confidence: 99%
“…However, the observed "flopping" behaviour is heavily damped, since semiconductor QDs suffer from the usual solid-state problems of environment-induced decoherence [24][25][26][27]. Decoherence has a major influence in the indistinguishable nature of the emitted photons, and is one of the biggest obstacles to overcome in realizing quantum information processing.…”
Section: Introductionmentioning
confidence: 99%
“…where the mean phonon number n q = b † qb q occurs. For temperatures well below 100 K, as considered here, a second-order Born approximation is well validated to solve the occurring hierarchy problem in the electron-phonon coupling, as can be seen by comparison to exactly solvable models [43,44] and experiments. To explore the high-temperature regime, terms beyond second-order must be included or other approaches employed [31].…”
Section: A2 Dynamicsmentioning
confidence: 87%
“…(12)), the limit of a vanishing damping is not applied here. Instead, a finite damping is considered which is equivalent to the Landau level broadening, and can be caused by disorder [113], or alternatively by interaction with acoustic phonons [114,115]. Therefore, before the many-particle dynamics of the charge carriers is accessible, the impurity-induced Landau level broadening is determined in the next section.…”
Section: Microscopic Bloch Equations For Landau-quantized Graphenementioning
confidence: 99%