Phonon-emission spectroscopy of a two-dimensional electron gas

Rothenfusser, M.; Köster, Luisa-Sophie; Dietsche, W.

doi:10.1103/physrevb.34.5518

Cited by 68 publications

(15 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At larger current amplitudes, an additional feature becomes visible at small magnetic fields where the Landau levels overlap. We attribute this to electron transitions across the Fermi surface, the dominant process at B 0 [8]. This is known to produce a significant fraction of phonons with energies of several meV, i.e., above the present threshold energy.…”

mentioning

confidence: 80%

See 1 more Smart Citation

Spectroscopy of Phonon Emission in the Quantum Hall Effect Regime

1998

Self Cite

View full text Add to dashboard Cite

Phonon emission from two-dimensional electron gases in the quantum Hall effect (QHE) state of a Si MOSFET was measured using the phonon-induced conductivity of the substrate. The inherent phonon energy detection threshold of this system was used to analyze the frequency spectra of the phonons in strong magnetic fields. It was found that phonons with cyclotron energy are emitted in the QHE state. The emission takes place in the corners of the Hall bar sample where the current enters and exits. This observation probably indicates that, in the QHE state, the temperature of the electrons in the corners rises sufficiently to allow inter-Landau-level transitions. [S0031-9007(98)05967-5]

show abstract

mentioning

confidence: 80%

“…In zero magnetic field, the detection threshold of superconducting tunnel junctions was used to show there is a 2k F cutoff in the spectrum of the emitted phonons [8]. Only very indirect techniques were available in high magnetic fields, and the sensitivity limited the experiments again to currents greatly exceeding the breakdown threshold of the QHE.…”

mentioning

confidence: 99%

Spectroscopy of Phonon Emission in the Quantum Hall Effect Regime

1998

Self Cite

View full text Add to dashboard Cite

show abstract

“…So phonon absorption is only possible for phonons with qI1 4 q . The rest of the wavevector, the normal component q L , can be absorbed provided q1 -1 n/a [13] as in a 2DEG [2]. This is not a particularly restrictive condition for narrow QWs and, for the 25 A QW, includes most of the phonons incident on the QW in the present experiments.…”

Section: Discussionmentioning

confidence: 99%

“…In recent years this work has been extended to two-dimensional electron and hole gases (2DEGs and 2DHGs) and detailed studies have been carried out in Si MOSFETs and in GaAs/(AlGa)As heterostructures and quantum wells (QWs) both in zero and quantizing magnetic fields [2,3].2DExGs, being unstable boson gases of neutral excitations, differ considerably in their properties from 2DEGs and 2DHGs. The sheet density is determined by the incident laser intensity and at helium temperatures it is, in principle, possible to explore both the nondegenerate and degenerate regimes.…”

Section: Introductionmentioning

confidence: 99%

Phonon heating of two‐dimensional exciton gases in GaAs/AlGaAs quantum wells

et al. 1995

View full text Add to dashboard Cite

We report the first measurements of the interaction of non-equilibrium phonons with twodimensional exciton gases (2DExGs). The rise in the effective temperature of the 2DExG produced by the phonons depends on the width of the quantum well and the exciton sheet density and hence on the ratio 5 -l (ex-ph)/r-' (ex-ex). The dependence of the effective temperature rise on this ratio is attributed to the non-equilibrium frequency distribution of the phonons incident on the 2DExG.

show abstract

“…The evaluation of T(q) was similar to the one by Rothenfusser, Koster, and Dietsche. 2 The phonon frequency was assumed to be 120 GHz, the dominant phonon frequency of superconducting Al. The resulting theoretical patterns of the phonon-drag voltage are depicted in Figs.…”

Section: Q X =Fq X Lr(q)/v]f(q)dqmentioning

confidence: 99%

Imaging of the Phonon-Drag Effect in GaAs-AlGaAs Heterostructures

1988

Self Cite

View full text Add to dashboard Cite

A channel of a two-dimensional electron gas in GaAs-AlGaAs heterostructures was irradiated with ballistic phonons at 1.2 K. No magnetic field was applied. A phonon-drag voltage was measured along the channel when phonons were absorbed in the channel and if the wave vector of these phonons had a component directed along the channel. The anisotropic nature of this phonon-drag effect was established with the phonon-imaging technique. From the comparison of the data with theory it follows that the electron-phonon coupling is of the piezoelectric type.

show abstract

Phonon-emission spectroscopy of a two-dimensional electron gas

Cited by 68 publications

References 13 publications

Spectroscopy of Phonon Emission in the Quantum Hall Effect Regime

Spectroscopy of Phonon Emission in the Quantum Hall Effect Regime

Phonon heating of two‐dimensional exciton gases in GaAs/AlGaAs quantum wells

Imaging of the Phonon-Drag Effect in GaAs-AlGaAs Heterostructures

Contact Info

Product

Resources

About