Phonon Broadening of Impurity Spectral Lines: I. General Theory

Abstract

The theory of the phonon broadening of impurity spectral lines is discussed within the framework of a Kubo-type formulation of the adiabatic dielectric susceptibility and the subsequent calculation of this using double-time Green's functions. The interaction of the bound electron (or hole) with the lattice vibrations is assumed to be weak and is treated as a small perturbation of the independent systems of electron and vibrating lattice; the use of the adiabatic approximation is thereby avoided. The cases in which the bound carrier states are degenerate and nondegenerate are discussed separately. The results are compared with previous work in the field.

Electronic properties of hydrogen-related complexes in pure semiconductors

“…D(H,O) donor in ultra-pure germanium. They found that the excited state lifetime approaches the fundamental limit given by final state mixing [20,21].…”

Impurity absorption spectroscopy of the deep double donor sulfur in isotopically enriched silicon

“…, f 1 (1) , , , , , , , , , , , , , , , , , A, (1) f, (1) , , The p-states of S+ and SO resemble each other very much with one major difference.…”

“…This result suggested that a fundamental lifetime broadening limit had been found and that all inhomogeneous broadening effects were eliminated. Barrie and Nishikawa [1,2] proposed that this lifetime broadening was a result of phonon-assisted transitions from the excited state to other near-lying…”

Far infrared fourier transform spectroscopy of semiconductors

“…Barrie and Nishikawa. [16,17] proposed more than twenty years ago that final state interactions are the main cause for line broadening. Kane [18] had shown earlier that phonon emission or absorption-assisted transitions contribute to a very broad background.…”