Articles you may be interested inElectric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals J. Appl. Phys. 116, 113911 (2014); 10.1063/1.4896172Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure AIP Advances 4, 057106 (2014); 10.1063/1.4876234The investigation of reversible strain and polarization effect in (011)-La0.9Ba0.1MnO3 film using field effect configuration Effects of ferroelectric-poling-induced strain on the transport and magnetic properties of La 7 / 8 Ba 1 / 8 MnO 3 thin films La 0.67 Ba 0.33 MnO 3 thin films were epitaxially grown on (111)-oriented 0.31Pb(In 1/2 Nb 1/2 )O 3 -0.35Pb(Mg 1/3 Nb 2/3 )O 3 -0.34PbTiO 3 ferroelectric single-crystal substrates. During ferroelectric poling and polarization rotation, the resistance of La 0.67 Ba 0.33 MnO 3 films tracks the electric-fieldinduced in-plane strain of substrates effectively, implying strain-mediated coupling. Upon poling along the [111] direction, ferromagnetism is suppressed for T < 175 K, but enhanced for T > 175 K, which is explained by magnetoelastic coupling that modifies the film's magnetic anisotropy. Our findings also show that the magnetic field has an opposite effect on the strain-tunability of resistance [i.e.,ðDR=RÞ strain ] above and below the Curie temperature T C , which is interpreted within the framework of phase separation. V C 2013 AIP Publishing LLC. [http://dx.