Phase transition in bulk single crystals and thin films of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">V</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>by nanoscale infrared spectroscopy and imaging

Liu, Mengkun; Sternbach, Aaron; Wagner, Martin; Slusar, Tetiana; Kong, Tai; Bud’ko, Sergey L.; Kittiwatanakul, Salinporn; Qazilbash, M. M.; McLeod, Alexander; Fei, Zhe; Abreu, Elsa; Zhang, Jingdi; Goldflam, Michael; Dai, Siyuan; Ni, Guang Xin; Lu, Jiwei; Bechtel, Hans A.; Martin, Michael; Raschke, Markus B.; Averitt, R. D.; Wolf, Stuart A.; Kim, Hyun‐Tak; Canfield, Paul C.; Basov, D. N.

doi:10.1103/physrevb.91.245155

Cited by 95 publications

(80 citation statements)

References 81 publications

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“…4(a) we plot the AFM topography. Grains are clearly observed in this image, which are typical of polycrystalline films [17, 41,49]. In Fig.…”

Section: Artifact-free Time-resolved Near-field Results In the Near-imentioning

confidence: 86%

“…In general, compressive (tensile) strain along c R yields T IMT lower (higher) than in bulk [41][42][43]. Bulk crystals and unstrained polycrystalline films on sapphire substrates usually have an IMT close to T IMT = 340 K. Films on [001] R TiO 2 substrate are compressively strained along c R , leading to a T IMT < 340 K [41]. Topographic corrugations, or "buckles", locally relieve the strain in samples grown on TiO 2 [001] R .…”

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

“…The transition temperature of VO 2 films can be tuned by epitaxial strain [42]. In general, compressive (tensile) strain along c R yields T IMT lower (higher) than in bulk [41][42][43]. Bulk crystals and unstrained polycrystalline films on sapphire substrates usually have an IMT close to T IMT = 340 K. Films on [001] R TiO 2 substrate are compressively strained along c R , leading to a T IMT < 340 K [41].…”

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

“…The highly oriented VO 2 films on [001] R TiO 2 substrate, as well as polycrystalline samples on Al 2 O 3 substrates, were fabricated by the pulsed-laser deposition method; details of thin film fabrication and characterization have been reported elsewhere [17,41]. Static near-field imaging works have shown that VO 2 experiences a percolative phase transition with coexisting insulating and metallic states amidst the IMT [17,19,41]. The transition temperature of VO 2 films can be tuned by epitaxial strain [42].…”

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

“…2(g) we show a schematic representation of the pulses involved and indicate the relevant time scales. To attain the highest possible signal-to-noise of the transient component of the near-field signal we adapted a boxcar-based approach [41] to time-resolved s-SNOM measurements. In this approach one utilizes a pair of probe pulses.…”

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

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Artifact free time resolved near-field spectroscopy

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Abstract:We report on the first implementation of ultrafast near field measurements carried out with the transient pseudoheterodyne detection method (Tr-pHD). This method is well suited for efficient and artifact free pump-probe scattering-type near-field optical microscopy with nanometer scale resolution. The Tr-pHD technique is critically compared to other data acquisition methods and found to offer significant advantages. Experimental evidence for the advantages of Tr-pHD is provided in the near-IR frequency range. Crucial factors involved in achieving proper performance of the Tr-pHD method with pulsed laser sources are analyzed and detailed in this work. We applied this novel method to femtosecond time-resolved and nanometer spatially resolved studies of the photo-induced effects in the insulator-to-metal transition system vanadium dioxide. 5660-5694 (2000). 4. T. Kampfrath, K. Tanaka, and K. A. Nelson, "Resonant and nonresonant control over matter and light by intense terahertz transients," Nat. Photonics 7(9), 680-690 (2013). 5. J. Orenstein, "Ultrafast spectroscopy of quantum materials," Phys. Today 65(9), 44-50 (2012 Express ; 25 (2017 25 ( ), 23. -S. 28589-28611 https://dx.doi.org/10.1364 Cavalleri, "Light-Induced Superconductivity in a Stripe-Ordered Cuprate," Science 331(6014), 189-191 (2011). 12. J. Zhang, X. Tan

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“…4(a) we plot the AFM topography. Grains are clearly observed in this image, which are typical of polycrystalline films [17, 41,49]. In Fig.…”

Section: Artifact-free Time-resolved Near-field Results In the Near-imentioning

confidence: 86%

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

Section: Time-resolved Near-field Studies Of Vo2mentioning

confidence: 99%

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Spectroscopic Studies on the Metal–Insulator Transition Mechanism in Correlated Materials

et al. 2018

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The metal-insulator transition (MIT) in correlated materials is a novel phenomenon that accompanies a large change in resistivity, often many orders of magnitude. It is important in its own right but its switching behavior in resistivity can be useful for device applications. From the material physics point of view, the starting point of the research on the MIT should be to understand the microscopic mechanism. Here, an overview of recent efforts to unravel the microscopic mechanisms for various types of MITs in correlated materials is provided. Research has focused on transition metal oxides (TMOs), but transition metal chalcogenides have also been studied. Along the way, a new class of MIT materials is discovered, the so-called relativistic Mott insulators in 5d TMOs. Distortions in the MO (M = transition metal) octahedron are found to have a large and peculiar effect on the band structure in an orbital dependent way, possibly paving a way to the orbital selective Mott transition. In the final section, the character of the materials suitable for applications is summarized, followed by a brief discussion of some of the efforts to control MITs in correlated materials, including a dynamical approach using light.

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Modern Scattering‐Type Scanning Near‐Field Optical Microscopy for Advanced Material Research

et al. 2019

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IntroductionOver the past decade, optical near-field techniques, especially scattering-type scanning near-field optical microscopy Infrared and optical spectroscopy represents one of the most informative methods in advanced materials research. As an important branch of modern optical techniques that has blossomed in the past decade, scattering-type scanning near-field optical microscopy (s-SNOM) promises deterministic characterization of optical properties over a broad spectral range at the nanoscale. It allows ultrabroadband optical (0.5-3000 µm) nanoimaging, and nanospectroscopy with fine spatial (<10 nm), spectral (<1 cm −1 ), and temporal (<10 fs) resolution. The history of s-SNOM is briefly introduced and recent advances which broaden the horizons of this technique in novel material research are summarized. In particular, this includes the pioneering efforts to study the nanoscale electrodynamic properties of plasmonic metamaterials, strongly correlated quantum materials, and polaritonic systems at room or cryogenic temperatures. Technical details, theoretical modeling, and new experimental methods are also discussed extensively, aiming to identify clear technology trends and unsolved challenges in this exciting field of research. and Astronomy. His research interests cover nanoscale and ultrafast electromagnetic responses of strongly correlated electron materials, 2D materials, and metamaterials that span from the near-infrared to terahertz frequencies.tip-sample interactions. In s-SNOM, these difficulties result from at least three factors. First, the well-known antenna effect [48] causes light to be highly confined between the probe apex and the sample surface. The specific geometry of the tip shank plays a significant role in determining the intensity of the scattered signal. [49] Second, in addition to the local optical information, a strong but undesired background signal can be detected. This background signal can be mainly attributed to the light scattering from the tip shank, cantilever, and sample surface. Third, due to the broad momentum distribution of the localized radiation, in some cases, nominally "far-field trivial" Adv. Mater. 2019, 31, 1804774 Figure 1. Far-field (blue) and near-field (yellow) measurements, accessing the propagating field and the evanescent field, respectively.The authors declare no conflict of interest.

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Phase transition in bulk single crystals and thin films ofVO2by nanoscale infrared spectroscopy and imaging

Cited by 95 publications

References 81 publications

Artifact free time resolved near-field spectroscopy

Artifact free time resolved near-field spectroscopy

Spectroscopic Studies on the Metal–Insulator Transition Mechanism in Correlated Materials

Modern Scattering‐Type Scanning Near‐Field Optical Microscopy for Advanced Material Research

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