Phase-transition driven memristive system

Driscoll, Tom; Kim, H.-T.; Chae, Byung-Gyu; Ventra, Massimiliano Di; Basov, D. N.

doi:10.1063/1.3187531

Cited by 347 publications

(259 citation statements)

References 31 publications

(34 reference statements)

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“…This has resulted in various attempts to build memristor devices based on different underlying physical principles, as well as efforts to understand pre-existing devices in the context of memristive systems. Examples include thin films (Williams 2008;Yang et al 2008;Borghetti et al 2009;Driscoll et al 2009;Pickett et al 2009;), nanoparticle assemblies ), spintronics (Pershin & Di'Ventra 2008) or neurobiological systems (Pershin et al 2009;Perez-Carrasco et al 2010). On the theoretical front, however, the analysis of these systems has been mostly restricted to numerics (i.e.…”

Section: Introductionmentioning

confidence: 99%

Quantitative measure of hysteresis for memristors through explicit dynamics

et al. 2012

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We introduce a mathematical framework for the analysis of the input-output dynamics of externally driven memristors. We show that, under general assumptions, their dynamics comply with a Bernoulli differential equation and hence can be nonlinearly transformed into a formally solvable linear equation. The Bernoulli formalism, which applies to both charge-and flux-controlled memristors when either current or voltage driven, can, in some cases, lead to expressions of the output of the device as an explicit function of the input. We apply our framework to obtain analytical solutions of the i-v characteristics of the recently proposed model of the Hewlett-Packard memristor under three different drives without the need for numerical simulations. Our explicit solutions allow us to identify a dimensionless lumped parameter that combines device-specific parameters with properties of the input drive. This parameter governs the memristive behaviour of the device and, consequently, the amount of hysteresis in the i-v. We proceed further by defining formally a quantitative measure for the hysteresis of the device, for which we obtain explicit formulas in terms of the aforementioned parameter, and we discuss the applicability of the analysis for the design and analysis of memristor devices.

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Section: Introductionmentioning

confidence: 99%

Quantitative measure of hysteresis for memristors through explicit dynamics

et al. 2012

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“…[7,8,9] The resistive switching random access memory (RRAM) has been identified as a promising candidate for fast terabit memories. [10,11,12] Beyond their applications as computer memory, resistive switching devices have also proven to be promising candidates for their applications as lumped elements in neuromorphic systems. [13,14] Here, the key features are low power consumption, passivity, and scalability into the nanometer scale.…”

Section: Introductionmentioning

confidence: 99%

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Dirkmann

Ziegler

Hansen

et al. 2015

Journal of Applied Physics

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In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO 2 /Pt sandwich-like thin film system. The developed model is not limited to i) fast time scale dynamics and ii) only one growth and dissolution cycle of metallic filaments. In particular, we present results from the simulation of consecutive cycles. We find that the numerical results are in excellent agreement with experimentally obtained data. Additionally, we observe an unexpected filament growth mode which is in contradiction to the widely acknowledged picture of filament growth, but consistent with recent experimental findings.

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“…2 Owing to its outstanding characteristic, VO 2 has been intensely investigated to be applying for electronic or optical devices. [3][4][5] For describing the MIT in VO 2 , two major mechanisms have been argued: the electronphonon mechanism (the Peierls mechanism 6,7 ) and the electron correlation mechanism (the Mott mechanism 8,9 ). There is much experimental evidence of a strong electronic correlation in VO 2 .…”

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confidence: 99%

Optical properties for the Mott transition in VO2

et al. 2012

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The relationship between the first-order metal-insulator transition (MIT) and the structural phase transition (SPT) in VO2 film is analyzed by dielectric function, optical conductivity, plasma energy, and electrical conductivity. The MIT and SPT temperatures in VO2 films were approximately 68 and 75 °C, respectively, with an intermediate phase existing between 68 and 75 °C. The optical and electrical results indicate that the first-order MIT in VO2 films is not driven by the SPT

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Phase-transition driven memristive system

Cited by 347 publications

References 31 publications

Quantitative measure of hysteresis for memristors through explicit dynamics

Quantitative measure of hysteresis for memristors through explicit dynamics

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Optical properties for the Mott transition in VO2

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