1992
DOI: 10.1007/978-1-4899-3051-4
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Phase Transformations in Metals and Alloys

Abstract: Porter and Easterling have written a superb undergraduate phase transformations text. I happened on an advance copy of the book last summer, and proceeded to use it as a text in our required junior phase transformations course of 45 materials science students, The text was very well received and the students performed well.A great deal of hard, careful work has clearly gone into this book. The topics follow a logical succession, and the derivations are clear, direct, and remarkably free of errors, either mathe… Show more

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Cited by 3,089 publications
(3,197 citation statements)
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“…Phenomena at the microstructure scale are fairly well studied and several relationships between process variables and resulting microstructure have been proposed (Banerjee and Mukhopadhyay 2007;Porter and Easterling 1992). Material and microstructure behaviour models can be grouped in three broad classes (Furrer and Semiatin 2010).…”
Section: Modelling Microstructure Evolutionmentioning
confidence: 99%
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“…Phenomena at the microstructure scale are fairly well studied and several relationships between process variables and resulting microstructure have been proposed (Banerjee and Mukhopadhyay 2007;Porter and Easterling 1992). Material and microstructure behaviour models can be grouped in three broad classes (Furrer and Semiatin 2010).…”
Section: Modelling Microstructure Evolutionmentioning
confidence: 99%
“…The model focuses primarily on reproducing correctly the beginning and end of transformation, the intermediate steps are not considered. Arrhenius rate-type equation, used to describe the temperature dependence of a phenomena, is a well-known example (Porter and Easterling 1992). The precise underlying mechanism(s) are not incorporated resulting in needs for calibration of the relationship and risk for inaccurate use when the process mechanism(s) changes.…”
Section: Phenomenological Modelsmentioning
confidence: 99%
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“…We believe that the formation of dopant basal planes is related to classical precipitation kinetics. 31 In the higher-doped samples, there will be more nucleation events due to the increased dopant concentration. Because of the overlapping diffusion fields of the different nucleation sites in the higher doped samples, the growth rate will quickly drop off leading to smaller dopant planes, and thus smaller voids.…”
mentioning
confidence: 99%
“…Another reason is that there may exist a heterogeneous defect at the center of the interface which favors a step nucleation. 40 Without including the incubation time of nucleation, on the basis of the measured radial growth rate of 135 nm/sec, the axial growth rate of each CoSi 2 atomic layer is about 1.82 nm/sec. This result shall be obtained by using the following equation as well…”
mentioning
confidence: 99%