Phase transformations during microcutting tests on silicon

Tanikella, B. V.; Somasekhar, A. H.; Sowers, A. T.; Nemanich, R. J.; Scattergood, R.O.

doi:10.1063/1.117346

Cited by 60 publications

(51 citation statements)

References 3 publications

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“…[6][7][8][9][10][11][12][13][14] were also used for the simulation study of anisotropic surface quality during the ultra-precision turning of single-crystal silicon. However, the important idea is that depending on the different crystal plane selected as the machined surface, when the cutting direction changes continuously, according to Eq.…”

Section: Simulation Study Methodsmentioning

confidence: 99%

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Anisotropy of machined surfaces involved in the ultra-precision turning of single-crystal silicon—a simulation and experimental study

Wang

Zhang

2011

Int J Adv Manuf Technol

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A new method was proposed for simulating the anisotropic surface quality of machined single-crystal silicon. This represents the first time that not only the mechanical properties of silicon, but also the crystal orientation, which is closely linked to the turning process, have been given consideration. In this paper, the crystallographic relationship between machined crystal planes and slip planes involved in ultra-precision turning was analyzed. The elasticity, plasticity, and brittleness properties of silicon in different crystal orientations were calculated. Based on the brittle-ductile transition mechanism of ultraprecision turning of single-crystal silicon, the orientation dependence of the surface quality of (111), (110), and (100) crystal planes were investigated via computer simulation. According to the simulation results, the surface quality of all machined planes showed an obvious crystallographic orientation dependence while the (111) crystal plane displayed better machinability than the other planes. The anisotropic surface properties of the (111) plane resulted from the continuous change of the cutting direction, which causes a change of actual angle between the slip/cleavage plane and machined plane. Anisotropic surface properties of planes (100) and (110) result from anisotropy of mechanical properties and the continuous changes of the cutting direction, causing the actual angle between slip/ cleavage plane and machined plane to change simultaneously. A series of cutting experiments were carried out on the (111) and (100) crystal planes to verify the simulation results. The experimental results showed that cutting force fluctuation features and surface roughness are consistent with the anisotropy characteristics of the machined surface as revealed in simulation studies.

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Section: Simulation Study Methodsmentioning

confidence: 99%

“…A number of studies have achieved ductile mode cutting of silicon using microturning processes [1][2][3][4][5][6][7][8][9][10][11][12][13]. However, in the research field of ultra-precision machining, few studies have analyzed the anisotropy of surface quality relative to the mechanism of brittle-ductile transition.…”

Section: Introductionmentioning

confidence: 99%

Anisotropy of machined surfaces involved in the ultra-precision turning of single-crystal silicon—a simulation and experimental study

Wang

Zhang

2011

Int J Adv Manuf Technol

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“…In recent years, many investigations have been conducted to study the cutting behavior in nano-scale using molecular dynamics (MD) simulation or material deformation behavior using nanoindentation [4][5][6][7][8][9]. There have been some reports on diamond cutting as a technique for producing optical quality surfaces on brittle materials such as silicon [1][2][3][6][7][8][10][11][12][13]16]. However, little research has been done in establishing a mechanism of cutting single crystal silicon in nano-scale.…”

Section: Introductionmentioning

confidence: 99%

A study on mechanism of nano-cutting single crystal silicon

Fang¹,

Wu²,

Zhou³

et al. 2007

Journal of Materials Processing Technology

150

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“…In addition, the study of transformation to the high-pressure phase has technological importance for having control in the precision micromachining process steps using enhancement of ductility in these systems. [7,8] In these contexts, a complete understanding of phase transformation of Si under high pressure is of renewed interest in the age of ion cutting and ion doping to suit Si-based devices, namely, very very large scale integrated (VVLSI) technology and microelectromechanical (MEMS) or even nano-electromechanical systems (NEMS) systems. [9] In the pressure range of up to 40 GPa, the diamond-like Si-I (0-11 GPa) phase is reported to transform to a metastable phase of body-centered tetragonal β-Sn structured Si-II (11)(12)(13)(14)(15) phase, which on further relaxation transforms to various phases of Si, namely, Si-III (10-0 GPa) having crystallographic structure of body centered cubic with eight atoms at the basis (bcc8), and Si-XII (12-2 GPa) rhombohedral (r8) structure.…”

Section: Introductionmentioning

confidence: 99%

A complete Raman mapping of phase transitions in Si under indentation

Das

Hsu

Dhara

et al. 2009

J Raman Spectroscopy

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Crystalline Si substrates are studied for pressure-induced phase transformation under indentation at room temperature (RT) using a Berkovich tip. Raman spectroscopy, as a nondestructive tool, is used for the identification of the transformed phases. Raman lines as well as area mapping are used for locating the phases in the indented region. Calculation of pressure contours in the indented region is used for understanding the phase distribution. We report here a comprehensive study of all the phases of Si, reported so far, leading to possible understanding of material properties useful for possible electromechanical applications. As a major finding, distribution of the amorphous phase in the indented region deviates from the conventional wisdom of being in the central region alone. We present phase mapping results for both Si(100) and Si(111) substrates.

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Phase transformations during microcutting tests on silicon

Cited by 60 publications

References 3 publications

Anisotropy of machined surfaces involved in the ultra-precision turning of single-crystal silicon—a simulation and experimental study

Anisotropy of machined surfaces involved in the ultra-precision turning of single-crystal silicon—a simulation and experimental study

A study on mechanism of nano-cutting single crystal silicon

A complete Raman mapping of phase transitions in Si under indentation

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