Dense monolithic silicon carbide (SiC) was successfully sintered by
hot-pressing at 1750 ?C for 1 h under an applied pressure of 20 MPa with the
addition of a nitrate-based additive. A relative density of more than 98%
were obtained with the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form,
while in the oxide form they were 85.0 and 96.0%, respectively. Indeed,
MgO-Y2O3 showed poor densification due to the eutectic temperature of 2110?C,
however, the addition of nitrate form of MgO-Y2O3 enhanced the densification
greatly. The sintering mechanism in the nitrate-based additive is liquid
phase sintering, which is identified by the presence of an oxide phase, i.e.,
Y2O3 in the SiC with the addition of Al2O3-Y2O3 in nitrate form. Moreover,
the addition of nitrate form suppressed the grain growth of SiC, which was
believed to be due to the adequate rearrangement stage during sintering.