2018
DOI: 10.1016/j.scriptamat.2017.02.031
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Phase transformation on spark plasma sintered dense polycarbosilane-derived SiC without additive

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Cited by 19 publications
(11 citation statements)
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“…The phase transformation of SiC was reported to be closely dependent on the temperature, duration, pressure, 46 and doping element 47,48 . In particular, relatively high pressures (>50 MPa) can induce the phase transformation of β‐SiC to α‐SiC in SPS‐SiC ceramics within a short time (<10 min) 44,45 . Meanwhile, it is well documented that nitrogen can retard the phase transformation of β‐SiC to α‐SiC 47,48 .…”
Section: Resultsmentioning
confidence: 99%
“…The phase transformation of SiC was reported to be closely dependent on the temperature, duration, pressure, 46 and doping element 47,48 . In particular, relatively high pressures (>50 MPa) can induce the phase transformation of β‐SiC to α‐SiC in SPS‐SiC ceramics within a short time (<10 min) 44,45 . Meanwhile, it is well documented that nitrogen can retard the phase transformation of β‐SiC to α‐SiC 47,48 .…”
Section: Resultsmentioning
confidence: 99%
“…G. Franceschin et al 38 reported that the generation of electrical discharges during SPS induced a significant reduction of impurity phases in siliceous compounds. The application of pressure during densification has been reported to affect the phase formation in the sintered specimens 39‐41 …”
Section: Resultsmentioning
confidence: 99%
“…The application of pressure during densification has been reported to affect the phase formation in the sintered specimens. [39][40][41] FE-SEM micrographs and elemental mapping of the polished surfaces of the YB 2 C 2 sample are shown in Figure 5. The average grain size of the sintered YB 2 C 2 was 584 μm.…”
Section: Densification Of Yb 2 C 2 Powdermentioning
confidence: 99%
“…Thanks to the highly covalent bonding of SiC which gives excellent resistance in the chemical and thermal, as well as outstanding mechanical properties [5,6]. However, like other covalent bonding materials, the sintering of SiC is practically challenging due to the low diffusivity of Si and C. Although the densification of SiC is also possible without sintering additives [7][8][9][10], the sintering condition of those SiC is in harsh conditions. For instance, a sintering temperature > 1800 °C is needed to obtain near the theoretical density of SiC [7,8,10].…”
Section: Introductionmentioning
confidence: 99%