Phase separation in strained epitaxial InGaN islands

Niu, Xiaobin; Stringfellow, G. B.; Liu, Feng

doi:10.1063/1.3662927

Cited by 25 publications

(17 citation statements)

References 22 publications

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“…Theoretically, it was found that indium distribution in InGaN/GaN islands strongly depends on subsurface diffusion, whereby indium atoms tend to occupy the outmost island surface layer. 25 Thus, the island-like surface morphology together with the strain relaxation of the grown (0001) InGaN layers (<750 C) were attributed to the enhanced In incorporation, while the constant surface morphology of the ð11 22Þ InGaN layers did not induce a significant change in compositional trend.…”

Section: B Composition and Crystalline Propertiesmentioning

confidence: 98%

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Dinh

Oehler

Zubialevich

et al. 2014

Journal of Applied Physics

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InGaN layers were grown simultaneously on (112¯2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content (<15%) of the (112¯2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112¯2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112¯2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112¯2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112¯2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

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Section: B Composition and Crystalline Propertiesmentioning

confidence: 98%

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Dinh

Oehler

Zubialevich

et al. 2014

Journal of Applied Physics

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“…The most promising candidate for building a path across the green LED field is expected to be In x Ga 1Àx N. Alloying GaN with InN enables the development of a platform with combined blue and green LEDs based on a homogeneous system. However, the required indium content of at least 25% in alloys 1 leads to defect formation 2 and subsequent deterioration of electrical properties and decrease of device efficiency. On the other hand, the adjustable direct band gap and exceptional resistance to irradiation damage enable the application of In x Ga 1Àx N in solar cells for outer space.…”

Section: à3mentioning

confidence: 99%

Radiation-induced alloy rearrangement in InxGa1−xN

Prozheeva

Makkonen

Cuscó

et al. 2017

Applied Physics Letters

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The effect of radiation damage on the defect and alloy structure in InxGa1−xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.

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“…Thus, In clustering introduced at surfaces during growth cannot be excluded. Indeed, previous simulations indicate that phase separation in InGaN islands depends strongly on the surface and subsurface kinetics . Furthermore, bulk kinetics may play a significant role in suppressing or restricting the size of InN clusters in the case of plastically relaxed InGaN epilayers.…”

Section: Discussionmentioning

confidence: 96%

Ab initio‐based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity

Duff

Lymperakis

Neugebauer

2015

Physica Status Solidi (b)

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The growth of high In content InGaN with sufficiently high crystal quality is challenging due to the differences in the GaN and InN thermodynamics. The surprisingly different thermodynamics is due to a complex competition between strain and chemistry and mediated by the different indium and gallium atomic radii as well as their different bonding enthalpies with nitrogen. In the present work, we investigate bulk and surface thermodynamics of molecular beam epitaxial (MBE) growth of InxGa1−xN for the technologically relevant (0001) and (0001¯) growth planes by means of density functional theory calculations. Our calculations confirm that coherent growth fully suppresses phase separation through spinodal decomposition. However, the biaxial strain is found to have a marginal effect on the critical temperatures for InxGa1−xN decomposition. Furthermore, the thermal stability of excess indium is found to be remarkably higher on N‐polar surfaces than on the Ga‐polar surfaces. Phase diagram of In covered (a) Ga‐polar and (b) N‐polar surfaces as function of In pressure.

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Phase separation in strained epitaxial InGaN islands

Cited by 25 publications

References 22 publications

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Radiation-induced alloy rearrangement in InxGa1−xN

Ab initio‐based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity

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