Phase separation and enhanced magnetoresistance in the strained epitaxial La0.625Ca0.375MnO3 (001) films

Abstract

Strain effect caused by substrates on phase separation and transport properties in Pr0.7(Ca0.8Sr0.2)0.3MnO3 thin films J. Appl. Phys. 111, 07D721 (2012); 10.1063/1.3678297 Phase separation and persistent magnetic memory effect in La 0.625 Ca 0.375 MnO 3 and La 0.375 Pr 0.25 Ca 0.375 MnO 3 films La 0.625 Ca 0.375 MnO 3 films have been epitaxially grown on the (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.35 (001) substrates at different oxygen pressures and show varying tetragonal distortion. Results indicate a tendency that larger tetragonal distortion can stabilize the antiferromagnetic-insulator phase in the thin films. Colossal magnetoresistance (CMR) and anisotropic magnetoresistance (AMR) have been greatly enhanced only in the strained films over a broad temperature, probably responding to the anisotropic fluctuation of the nanoscale orientation-ordered patterns near the temperature of the phase separation region or metal-insulator transition. Hence, the inhomogeneous phase competition may contribute to the CMR and the extraordinary AMR effect for manganite devices. V C 2012 American Institute of Physics. [http://dx.

First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 × 1) Polar Terminations

“…LaAlO 3 is a great example with almost no diffusion at conventional deposition temperatures, and the LaAlO 3 film has been successfully deposited on Si, − MgO, and SrTiO 3 − substrates. In addition, the LaAlO 3 film is a potential buffer layer for the growth of various perovskite films. − Furthermore, because of the low conduction band offset, LaAlO 3 can be utilized as a charge storage layer in the fields of charge trap flash devices . In particular, LaAlO 3 is a powerful candidate for high- k materials in advanced Si-based complementary metal-oxide-semiconductor (CMOS) devices , because of its own unique features. ,− …”

Three-dimensional strain state and spacer thickness-dependent properties of epitaxial Pr0.7Sr0.3MnO3/La0.5Ca0.5MnO3/Pr0.7Sr0.3MnO3 trilayer structure

“…CMR effect in epitaxial La 0.625 Ca 0.375 MnO 3 films strongly increases with decrease of film thickness and strain relaxation degree, confirming the important role of lattice strain in determining physical properties. 9 More recently, three groups, [9][10][11] all demonstrated that the electromagnetic transport behavior of CMR manganite multilayers has been attributed to presence of lattice strain and disorder in epitaxial films. These results illustrated the importance of lattice strain and interfaces in determining physical properties of the oxide multilayers.…”