Phase Segregation in Sipos: Formation of Si Nanocrystals

Abstract

A characterization of Semi-insulating Polycrystalline Silicon (SIPOS) layers deposited from SiH4 on SiO2 is presented, as a function of growth and annealing conditions (time and temperature), in order to better understand the processes involved in nucleation of silicon nanocrystals. Correlation between optical and XPS measurements allows determination of the starting composition of the amorphous material. After annealing, Fourier transform infrared (FTIR), ultraviolet-visible and Raman spectroscopies have been used to determine the structural and optical characteristics of the resulting material. Thermal treatment promotes a phase separation, modifying the layer properties and degrading the electrical insulation characteristics. Concentration of the silicon dioxide phase increases, whereas elemental silicon precipitates into nanocrystals which nucleate near the interface with the underneath SiO2. Their density depends of the initial silicon content in the SIPOS layer, and some directions such as <1I1> and <220> grow preferentially whereas other directions such as <311> show a slower growth. As the percentage of oxygen increases, the formation of precipitates is less marked.