Phase-locked (GaAl)As laser emitting 1.5 W cw per mirror

Abstract

A phase-locked multiple quantum well (GaAl)As injection laser is demonstrated to emit over 1.5 W/mirror (>3 W total) cw output power at ∼8350 Å with a maximum power conversion efficiency of 17.4%.

Semiconductor laser fluorimetry in the near-infrared region

“…The laser is compact and has a high conversion efficiency (4%), which is much larger than that of an argon ion laser (0.1%). It is noted that the energy conversion efficiency of 39% for one direction of the laser (78% for both laser facets) has been achieved for a high-power semiconductor laser (9). The power of the semiconductor laser can be readily modulated from very low to very high frequencies by controlling the electric current, and it can be stabilized by monitoring its output power with a photodiode in the package of the laser diode and by the feedback of the driving current.…”

New Laser Source Technology

“…The array thus emits as a single high-power diode laser with good beam quality. In experiments reported to date, as many as 40 stripes have been coupled to produce an average output power of 3.0 W at a wavelength of 832 nm (5). This new approach to power scaling of semiconductor diode lasers is expected to make them much more useful in a number of applications.…”

A Simple Analysis of the Einstein Relation in Ultrathin Films of Nonparabolic Semiconductors in the Presence of an Arbitrarily Oriented Magnetic Field

“…Heterostructures based on various materials are currently being studied because of the enhancement of the carrier mobility [2]. Such heterostructures find extensive applications in quantum well lasers [3], heterojunction FETs [4], high speed digital networks [5], optical modulators [6], and also in other devices. In ultrathin films where the film dimension is comparable to the de-Broglie wavelength of the carriers, the restriction of the motion of carriers in the direction normal to the film may be viewed as carrier confinement in an infinitely deep square potential well, leading to the quantization (known as quantum size effect (QSE)) of the wave vector of the carriers along the z-direction which produces a discrete energy spectrum.…”