Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)

González, J. C.; Miquita, Douglas R.; Silva, M. I. N. da; Magalhães-Paniago, R.; Moreira, M. V. B.; Oliveira, A. G. de

doi:10.1103/physrevb.81.113403

Cited by 6 publications

(2 citation statements)

References 23 publications

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“…The samples were grown by depositing a certain amount of iron θ F e onto the Si(111) substrate heated to the growth temperature T G , a process known as reactive deposition epitaxy (RDE), which is commonly used for the growth of iron silicide nanostructures (e.g. [10,15,[60][61][62][63]). Six samples, hereinafter referred to as S1-S6, were prepared, characterized and investigated.…”

Section: Methodsmentioning

confidence: 99%

Lattice dynamics and polarization-dependent phonon damping in α -phase FeSi2 nanostructures

et al. 2020

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We determined the lattice dynamics of metastable, surface-stabilized α-phase FeSi2 nanoislands epitaxially grown on the Si(111) surface with average heights and widths ranging from 1.5 to 20 nm and 18 to 72 nm, respectively. The crystallographic orientation, surface morphology and local crystal structure of the nanoislands were investigated by reflection high-energy electron diffraction, atomic force microscopy and X-ray absorption spectroscopy. The Fe-partial phonon density of states (PDOS), obtained by nuclear inelastic scattering, exhibits a pronounced damping and broadening of the spectral features with decreasing average island height. First-principles calculations of the polarization-projected Si-and Fe-partial phonon dispersions and PDOS enable the disentanglement of the contribution of the xy-and z -polarized phonons to the experimental PDOS. Modeling of the experimental data with the theoretical results unveils an enhanced damping of the z -polarized phonons for islands with average sizes below 10 nm. This phenomenon is attributed to the fact that the low-energy z -polarized phonons couple to the low-energy surface/interface vibrational modes. The thermodynamic and elastic properties obtained from the experimental data show a pronounced size-dependent behavior. arXiv:2003.02969v1 [cond-mat.mtrl-sci]

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Section: Methodsmentioning

confidence: 99%

Lattice dynamics and polarization-dependent phonon damping in α -phase FeSi2 nanostructures

et al. 2020

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“…For example, Fe 3 Si is ferromagnetic and is a promising candidate as spin injectors in future spintronic devices such as magnetic tunnel junctions [ 6 ]. β -FeSi 2 is semiconducting with a direct band gap of approximately 0.85 eV, which fits into the window of maximum transmission of optical fibers and is expected to be a suitable material for optoelectronic devices such as light detectors or near-infrared sources [ 2 , 7 ]. In addition to the above stable compounds, metastable iron silicide phases which do not exist in the bulk phase diagram can also be grown and stabilized on silicon surfaces by epitaxy due to the enhanced surface energy of thin films.…”

Section: Introductionmentioning

confidence: 99%

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

et al. 2013

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The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2p peaks of the film exhibit a lower spin-orbit splitting (−0.3 eV) and the Fe 2p3/2 level has a smaller full-width at half maximum (−0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the c (4 × 8) phase is in the FeSi2 stoichiometry regime. The c (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers.

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Step-edge guided growth of nanowires on three-fold symmetric vicinal Si(111) surfaces

Das

Choudhury

2020

Bull Mater Sci

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Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)

Cited by 6 publications

References 23 publications

Lattice dynamics and polarization-dependent phonon damping in α -phase FeSi2 nanostructures

Lattice dynamics and polarization-dependent phonon damping in α -phase FeSi2 nanostructures

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

Step-edge guided growth of nanowires on three-fold symmetric vicinal Si(111) surfaces

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