2003
DOI: 10.1007/s11664-003-0239-3
|View full text |Cite
|
Sign up to set email alerts
|

Phase formation and diffusion soldering in Pt/In, Pd/In, and Zr/Sn thin-film systems

Abstract: Potential candidates for thin-film diffusion soldering were investigated by analysis of phase formation and measurements of mechanical and thermal stability of thin-film bonds. Bilayers of Pt/In, Pd/In, and Zr/Sn of 500 nm/500 nm thickness were prepared by direct current magnetron sputtering followed by a 5 nm, thin protective Au layer. Single bilayer samples were heat-treated between 200°C and 500°C for 3-30 min and studied by x-ray diffraction (XRD) analysis. Some bilayers were bonded face-to-face between 30… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
16
0

Year Published

2007
2007
2016
2016

Publication Types

Select...
5

Relationship

1
4

Authors

Journals

citations
Cited by 22 publications
(16 citation statements)
references
References 22 publications
0
16
0
Order By: Relevance
“…3 with significant solid solubility, a low melting filler material and no intermetallic phases occurring at the bonding temperature. No intermetallic phases are formed in the bond during the diffusion brazing process in contrast to soldering or diffusion soldering [15][16][17] which is ruled by different phase diagrams.…”
Section: Phase Diagram Applications Exemplified With Cu-nimentioning
confidence: 98%
“…3 with significant solid solubility, a low melting filler material and no intermetallic phases occurring at the bonding temperature. No intermetallic phases are formed in the bond during the diffusion brazing process in contrast to soldering or diffusion soldering [15][16][17] which is ruled by different phase diagrams.…”
Section: Phase Diagram Applications Exemplified With Cu-nimentioning
confidence: 98%
“…For the base metal, it is majorly focused on the Cu, Ag and Au series [9,[11][12][13][14][15][16][17][18][19], while researches on Ni, Pd and Pt have been also reported in recent years [20,21]. The primary criterion for selection of an interlayer is melting point and compatibility with base metal such as high solubility and high diffusivity.…”
Section: Introductionmentioning
confidence: 99%
“…In general, LTTLP bonding process is often conducted at temperatures higher than melting point of the interlayer by a range of 15-120°C, and bonding time mainly depends on the thickness of the interlayer [9,[15][16][17][18][19]. Most of studies concentrated on microstructure evolution [9,21,23], interfacial reaction [12,13,21], kinetics of the IMCs growth [12,13], thermal reliability [24,25], and electrical or mechanical behaviors of the joints [9,11,23] for above systems applied in electronic packaging and interconnects.…”
Section: Introductionmentioning
confidence: 99%
“…[14][15][16] When acceptable bonding temperatures and times are used, the TLP joints produced generally consist of intermetallic compounds (IMCs) of the base metals and the Sn, In, InSn, SnBi, BiIn 2 , or SnInBi interlayer. Although the IMCs are more brittle than the corresponding base metals, they have much higher mechanical strength and creep resistance than the conventional Sn-based solders used in electronic packaging and interconnects.…”
Section: Introductionmentioning
confidence: 99%