2020
DOI: 10.1021/acsami.0c03570
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Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

Abstract: Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of complementary metal–oxide–semiconductor (CMOS) compatible and scaled microelectronic applications, including memory, low-voltage transistors, and infrared sensors, among others. An outstanding challenge hindering the implementation of this material is polarization instability during field cycling. In this study, the nanoscale phenomena contributing to both polarization fatigue and wake-up are reported. Using synchrotron X-ray dif… Show more

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Cited by 96 publications
(99 citation statements)
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References 49 publications
(84 reference statements)
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“…Although there are observations of large polarizations that are comparable with those of perovskite‐oxide ferroelectrics, doped HfO 2 thin films suffer from severe fatigue problems during bipolar electric field cycling. [ 21–30 ] Switchable polarizations ( P SW ) have been observed to be degraded to zero after ≈10 9 cycles in Hf 0.5 Zr 0.5 O 2 and Y:HfO 2 thin films. [ 22,28 ] In addition, dramatically increased leakage currents and dielectric breakdown appeared in fatigued HfO 2 thin films.…”
Section: Figurementioning
confidence: 99%
See 1 more Smart Citation
“…Although there are observations of large polarizations that are comparable with those of perovskite‐oxide ferroelectrics, doped HfO 2 thin films suffer from severe fatigue problems during bipolar electric field cycling. [ 21–30 ] Switchable polarizations ( P SW ) have been observed to be degraded to zero after ≈10 9 cycles in Hf 0.5 Zr 0.5 O 2 and Y:HfO 2 thin films. [ 22,28 ] In addition, dramatically increased leakage currents and dielectric breakdown appeared in fatigued HfO 2 thin films.…”
Section: Figurementioning
confidence: 99%
“…On one hand, the ferroelectric o‐phase is metastable and the transition to nonferroelectric phases may take place during electric field cycling, which results in the polarization degradations, as observed in Pt/Hf 0.5 Zr 0.5 O 2 /Pt thin‐film capacitors. [ 27 ] On the other hand, the pinning effect at non‐electroneutral ferroelectric domain walls by charged defects, which is also a main origin for polarization fatigue in conventional perovskite‐oxide ferroelectrics, [ 31,32 ] has been reported in Y:HfO 2 thin films. [ 28 ] Therefore, more effort is required to clarify the fatigue mechanism of HfO 2 thin films.…”
Section: Figurementioning
confidence: 99%
“…The amount and distribution of oxygen vacancies are closely related to the electrode materials and the interfacial layers, so different trends of polarization response with field cycling depending on the electrode materials can be expected. [95] Investigations on the effects of TE in HfO 2 -based ferroelectric devices can be divided into different categories depending on the chosen material. The most common choice has been metal nitride electrodes, for example, TiN and TaN.…”
Section: Effects Of Electrode Materials and Interfacial Layermentioning
confidence: 99%
“…The amount and distribution of oxygen vacancies are closely related to the electrode materials and the interfacial layers, so different trends of polarization response with field cycling depending on the electrode materials can be expected. [ 95 ]…”
Section: Effects Of Electrode Materials and Interfacial Layermentioning
confidence: 99%
“…In the literature, synchrotron‐based in situ XRD measurements during field‐cycling show measured phase changes typically in the sub 5% range even though P r increases more than 20–100% are reported. [ 18–21 ] Accordingly, phase changes during field‐cycling are present, but not the main mechanism to understand the wake‐up effect.…”
Section: Introductionmentioning
confidence: 99%