Phase evolution of sol–gel prepared Pb(Zr0.3Ti0.7)O3 thin films deposited on IrO2/TiO2/SiO2/Si electrodes

Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top electrodes in PbLaZrTiO x capacitors

“…Law et al [37] reported that PZT (5 mol.% excess Pb) thin films deposited by the sol-gel method on a Pt(111)/Ti/SiO 2 /Si substrate exhibited pyrochlore (222) phase ascribed to 2h =298 at pyrolysis temperatures above 400 8C. Van Genechten et al [38] reported that PZT (16 mol.% excess Pb) thin films fabricated by the sol-gel method on IrO 2 substrates that crystallized at below 580 8C also exhibited pyrochlore (222), (400) and (440) phase ascribed to 2h = 29, 34 and 498, respectively. Wang et al [39] reported that PZT (-10 and 0 mol.% excess Pb) thin [41]).…”

Tailoring Ferroelectric Properties of 0.37BiScO3–0.63PbTiO3Thin Films Using a Multifunctional LaNiO3Interlayer

“…14,15 In addition, to the use of buffer and seed layers, it has been known for many years that oxide electrodes used instead of plantinum (Pt on Ti/SiO2/Si) improve performance since they prevent undesired compositional modification and impede charge interdiffusion processes. [16][17][18][19] Table I describes some examples of the effect of interlayers on ferroelectric films.…”

Enhanced electrical properties in ferroelectric thin films on conductive Au–LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier

“…One kind is noble metals, such as Pt and Au, for their low resistivity and stable chemical state. The other kind is conductive oxides, including rutile-related metallic oxides (RuO 2 , IrO 2 , and ITO) [9][10][11] and perovskiterelated metallic oxides (LaNiO 3 (LNO), SrRuO 3 , (La,Sr)CoO 3 and Nb-doped SrTiO 3 et al). [12][13][14][15] However, several intrinsic problems may impede their practical use in the ferroelectric micro-devices.…”