Phase evolution and crystallization in Si–B–C–N ceramics derived from a polyborosilazane precursor: microstructural characterization

Crystallization Behavior of Amorphous Si2BC3N Ceramic Monolith Subjected to High Pressure

“…For example, phase evolution in amorphous Si–B–C–N powders on heating to 1400°C has been reported. This work identifies the formation of turbostratic B–C–N phase and the crystallization of SiC nanocrystals (2–10 nm), whereas Si 3 N 4 crystallization occurred only at 1700°C . In addition, sub‐100 nm SiC and BN(C) crystals were reported for hot‐pressed Si–B–C–N monoliths where the crystallization of β‐SiC, turbostratic BN(C), and α‐SiC starts at 1500°C, 1600°C, and 1700°C, respectively …”

“…This work identifies the formation of turbostratic B-C-N phase and the crystallization of SiC nanocrystals (2-10 nm), whereas Si 3 N 4 crystallization occurred only at 1700°C. 17 In addition, sub-100 nm SiC and BN(C) crystals were reported for hot-pressed Si-B-C-N monoliths where the crystallization of b-SiC, turbostratic BN(C), and a-SiC starts at 1500°C, 1600°C, and 1700°C, respectively. 13 The previous TEM studies focused more on the characterization of amorphous and nanocrystalline materials than structural evolution during crystallization.…”

Thermal conductivity of precursor derived Si–B–C–N ceramic foams using Metroxylon sagu as sacrificial template

“…The presence of silica could be attributed to the possible oxygen contamination during ball-milling or during SPS, leading to the formation of silica during sintering. In general, Si-B-C-N ceramic was observed to resist crystallization even till temperatures as high as 1700 1C [2,21]. The addition of boron aids SiC crystallization significantly; at the same time, formation of BCN turbostatic phase retards Si 3 N 4 crystallization till temperatures of 1700 1C for 10 h [22,23].…”

Simple and low‐cost synthetic route for SiBCN ceramic powder from a boron‐modified cyclotrisilazane

“…The structural characterization of BCTS resin was done using FT-IR (Perkin Elmer Spectrum GX spectrometer; Perkin Elmer Inc., Wellesley, MA, USA) and NMR (Bruker DMX 300 Spectrometer; Bruker BioSpin AG, Fällanden, Zürich, Switzerland) analysis. The 29 Si-and 11 B-NMR spectra were measured at 59.6 MHz and 96.3 MHz, respectively. 29 Si-NMR spectra were recorded using CDCl 3 as solvent and tetramethylsilane as an internal standard.…”