Phase diagrams of Al–Si and Al–Ge systems

Kagaya, Hideaki; Imazawa, Kazumoto; Sato, Mayumi; Soma, T.

doi:10.1016/s0921-4526(97)00677-7

Cited by 12 publications

(8 citation statements)

References 9 publications

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“…2. The solidus temperature remained almost constant, at 522.5 • C. Only one endothermic reaction was found in the DTA curve of Al-9.6Si-20Cu filler metal, and the melting point was near the Al-Si-Cu ternary eutectic point 525 • C [10]. The microstructure of the Al-9.6Si-20Cu filler metal consisted of an Al-rich phase (gray), Al 2 Cu intermetallic compounds, and some fine silicon particles in the dark region, as shown in Fig.…”

Section: Resultsmentioning

confidence: 89%

“…3. Two endothermic peaks were found in the DTA curve of the Al-10.8Si-10Cu alloy, which corresponds to the Al-Si-Cu ternary eutectic point and Al-Si liquidus temperature near the Al-Si binary eutectic, according to the Al-Si-Cu ternary and Al-Si binary diagrams, respectively [9,10]. The addition of 10 wt.% copper into the Al-12Si filler metal resulted in decreases of the solidus and liquidus temperatures of about 64 • C and 22 • C, respectively.…”

Section: Methodsmentioning

confidence: 99%

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Joining 6061 aluminum alloy with Al–Si–Cu filler metals

Chang¹,

Tsao²,

Li³

et al. 2009

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 89%

Section: Methodsmentioning

confidence: 99%

Joining 6061 aluminum alloy with Al–Si–Cu filler metals

Chang¹,

Tsao²,

Li³

et al. 2009

Journal of Alloys and Compounds

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“…For this alloy, Table 2 compares theoretical precipitate volume fraction (i.e. assuming no solubility of Si and Ge in Al at room temperature, which is in fact less than 0.01% [70][71][72]) with the TEM-measured volume fractions. Less than 20% of the Ge and Si has been precipitated in the under-aged condition (as defined later) whereas all of it (within experimental uncertainty) has been precipitated by the peak-aged condition.…”

Section: Experimental and Analytical Proceduresmentioning

confidence: 99%

“…Scatter is 3~5 nm, depending on aging condition (details in Section III.A). The total volume fraction of the precipitates was calculated using the following Equation 2 [72]:…”

Section: Aging and Precipitate Characterizationmentioning

confidence: 99%

Mechanism of the Bauschinger effect in Al-Ge-Si alloys

Wang

Bong

Lim

et al. 2017

Materials Science and Engineering: A

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Wrought Al-Ge-Si alloys were designed and produced to ensure dislocation bypass strengthening ("hard pin" precipitates) without significant precipitate cutting/shearing ("soft pin" precipitates). These unusual alloys were processed from the melt, solution heat treated and aged. Aging curves at temperatures of 120, 160, 200 and 240°C were established and the corresponding precipitate spacings, sizes, and morphologies were measured using TEM. The role of non-shearable precipitates in determining the magnitude of Bauschinger was revealed using large-strain compression/tension tests. The effect of precipitates on the Bauschinger response was stronger than that of grain boundaries, even for these dilute alloys. The Bauschinger effect increases dramatically from the under-aged to the peak aged condition and remains constant or decreases slowly through over-aging. This is consistent with reported behavior for Al-Cu alloys (maximum effect at peak aging) and for other Al alloys (increasing through over-aging) such as Al-Cu-Li, Al 6111, Al 2524, and Al 6013. The Al-Ge-Si alloy response was simulated with three microstructural models, including a novel SD (SuperDislocation) model, to reveal the origins of the Bauschinger effect in dilute precipitation-hardened / bypass alloys. The dominant mechanism is related to the elastic interaction of polarized dislocation arrays (generalized pileup or bow-out model) at precipitate obstacles. Such effects are ignored in continuum and crystal plasticity models.

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“…The binary phase diagram for aluminium-germanium couple shows an eutectic point [5]; at atmospheric pressure it occurs at 424 o C for 30 atomic % of germanium. The bonding occurs generally at high pressure, around 30 kbar; from the data reported in the literature [6] it is possible to infer that both composition and temperature at the eutectic point should increase with the pressure. This will have, at temperatures above the eutectic temperature, a strong effect on the relative quantity of solid, α-phase, and liquid formed for a fixed composition.…”

Section: Introductionmentioning

confidence: 96%

An aluminum‐germanium eutectic structure for silicon wafer bonding technology

Perez-Quintana

Ottaviani

Tonini

et al. 2005

phys. stat. sol. (c)

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An aluminum-germanium eutectic bonding technology has been used to uniformly bond two silicon wafers for MEMS packaging at temperatures as low as 450 o C, well below the aluminum-silicon eutectic temperature (577 o C). A device silicon wafer has been put in contact with a cap wafer where an aluminum film covered by a germanium film has been thermally evaporated. The annealing has been performed in a vacuum furnace under uniaxial pressure variable from 1.8 up to 30 kbar. The samples have been analyzed with various analytical techniques. 4 He + MeV Rutherford Backscattering Spectrometry (RBS) has been used to measure the thicknesses of the deposited films and to follow the aluminum-germanium intermixing, Scanning Acoustic Microscope (SAM) to control the uniformity of the bonding, Scanning Electron Microscope (SEM) associated with electron induced X-ray fluorescence to analyze composition, morphology and elements distribution in the film between the two bonded wafers. The temperatures for the annealing were selected above and below the Ge-Al the eutectic temperature. At temperatures below the eutectic no-bonding has been obtained for any applied pressure. Above the eutectic bonding occurs. The formation of a liquid film is mandatory to obtain a reproducible and robust bonding. The pressure is necessary to improve the contacts between the two wafers; its role in the metallurgy of the bonding needs to be explored.

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Phase diagrams of Al–Si and Al–Ge systems

Cited by 12 publications

References 9 publications

Joining 6061 aluminum alloy with Al–Si–Cu filler metals

Joining 6061 aluminum alloy with Al–Si–Cu filler metals

Mechanism of the Bauschinger effect in Al-Ge-Si alloys

An aluminum‐germanium eutectic structure for silicon wafer bonding technology

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