Phase Control and Stability of Thin Silicon Films Deposited from Silane Diluted with Hydrogen

Elzakker, G. van; Šutta, P.; Tichelaar, F.D.; Zeman, Miro

doi:10.1557/proc-0989-a08-01

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…Figure 4 shows the time-dependence of the S-parameter for the samples with dilution ratio's R=0 and R=10, for which FTPS measurements were performed in the as-deposited state and after 120 min of light soaking (Table 2). A clear decrease in positron S parameter was observed for the R=0 sample, indicative of a logarithmic time dependence previously observed for laser-light exposed samples [8]. On the other hand, S fluctuates around a constant level for the R=10 sample.…”

Section: Light Soakingsupporting

confidence: 74%

“…Raman spectroscopy was used to verify that these changes are not due to the appearance of crystalline domains. The latter may occur at high R-values, but this is only expected when using lower deposition pressures [8]. The sharp 520 cm -1 Raman peak, characteristic for crystalline domains, was absent in all cases.…”

Section: Methodsmentioning

confidence: 80%

“…Therefore, the light-induced (meta-stable) changes in the atomic structure of the silicon matrix, such as related to the Staebler-Wronski effect [3][4][5][6][7], need to be prevented or strongly reduced. Recent studies [8,9] showed that the light-induced degradation can be suppressed by hydrogen dilution of silane during rf-PECVD growth of a-Si:H layers.…”

mentioning

confidence: 99%

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Positron annihilation depth‐profiling as a promising tool for the structural analysis of light‐soaked a‐Si:H absorber layers

Eijt

Zhu

Schüt

et al. 2010

Phys. Status Solidi (c)

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Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a‐Si:H) absorber layers fabricated by the PE‐CVD method with typical thicknesses of 300‐500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen‐to‐silane flow ratio during their deposition, related to hydrogen‐induced changes in the microstructure and local composition at the positron trapping site. Light‐soaking degradation induces a time‐dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT‐Photocurrent Spectroscopy measurements. (© WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Light Soakingsupporting

confidence: 74%

Section: Methodsmentioning

confidence: 80%

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Positron annihilation depth‐profiling as a promising tool for the structural analysis of light‐soaked a‐Si:H absorber layers

Eijt

Zhu

Schüt

et al. 2010

Phys. Status Solidi (c)

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“…Since the volume density of atoms in amorphous Si is around 4 × 10 22 cm −2 , we may approximately attribute the α (1.2 eV) roughly to the defect ppm (parts per million). The level of 1 ppm is a benchmark for a state-of-the-art laboratory-grade material prepared by capacitively-coupled diode plasma-enhanced chemical vapor deposition (PE-CVD) in a light-soaked state (1000 h, 1 sun, 50 • C) (see Figure 1b) [2,17].…”

Section: Introductionmentioning

confidence: 99%

Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells

et al. 2020

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The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy has gone through continuous development during the last two decades. Still, giving quantitative predictions of photovoltaic device performance is a challenging task. As new materials appear, a prediction of potentially achievable open-circuit voltage with respect to bandgap is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. First, the absolute defect density has to be calculated, taking into account optical effects, such as absorption enhancement, due to scattering. Secondly, the electrical effect of thickness variation has to be addressed. We analyzed a series of state-of-the-art hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking degradation. Based on a combination of empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage of a device with a given defect density and absorber thickness. We observed that, rather than the defect density or thickness alone, it is their product or the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives close upper bounds to the open-circuit voltage with the advantage of a much easier evaluation.

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Comparison of a-SiC:H and a-SiN:H as candidate materials for a p-i interface layer in a-Si:H p-i-n solar cells

Vet

Zeman

2010

Energy Procedia

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Phase Control and Stability of Thin Silicon Films Deposited from Silane Diluted with Hydrogen

Cited by 6 publications

References 7 publications

Positron annihilation depth‐profiling as a promising tool for the structural analysis of light‐soaked a‐Si:H absorber layers

Positron annihilation depth‐profiling as a promising tool for the structural analysis of light‐soaked a‐Si:H absorber layers

Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells

Comparison of a-SiC:H and a-SiN:H as candidate materials for a p-i interface layer in a-Si:H p-i-n solar cells

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