Comparison of a-SiC:H and a-SiN:H as candidate materials for a p-i interface layer in a-Si:H p-i-n solar cells

Vet, B.; Zeman, Miro

doi:10.1016/j.egypro.2010.07.033

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…The absorption coefficient of nc-Si:H is about one order of magnitude higher than that of a-SiC:H in the visible part of the sun spectrum. This is in conjunction with the poor absorption property of a-SiC:H due to carbon-induced defects, as reported in the experimental work [33]. However, the absorption coefficient is less for nc-Si:H when compared with a-Si:H, and this translates into the reduced parasitic absorption in nc-Si:H window layer.…”

Section: Resultssupporting

confidence: 61%

“…The band gap of 2.0 eV for nc‐Si:H layer presents significant energy barrier for electrons, thus reducing recombination at an anode. The absorption coefficient profiles of three different materials have been extracted from different experimental work reported in the literature [21, 27, 33]. The absorption coefficient of nc‐Si:H is about one order of magnitude higher than that of a‐SiC:H in the visible part of the sun spectrum.…”

Section: Resultsmentioning

confidence: 99%

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Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Mehmood

Tauqeer

2017

IET Circuits, Devices & Syst

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Poor charge transport mechanism and light-induced degradation effects are among the key factors leading to the degraded performance of single-junction amorphous silicon (a-Si:H) solar cells. Existent photovoltaic configurations, based on amorphous silicon carbide (a-SiC:H) window layer, have established efficiencies in the range of 7-10%. Limited performance of such devices has been addressed by replacing a-SiC:H with a wide band gap (∼2 eV) hydrogenated nano-crystalline silicon (nc-Si:H) layer that reportedly exhibits crystalline properties at small scale. Here, the proposed solar cell based on p-nc-Si:H/i-a-Si:H (buffer)/i-a-Si:H/n-a-Si:H configuration has been simulated with SILVACO TCAD by analysing window and intrinsic absorber layers thickness, as well as doping concentrations. Along with the engineering of p/i interface, in-depth evaluation of absorber defects parameters has also been undertaken in order to reduce the recombination rate. The simulated results of an optimised single-junction device demonstrated an open-circuit voltage (VOC) of 0.865 V, short-circuit current density (JSC) of 21.7 mA/ cm 2 , Fill factor (FF) of 0.69 and power conversion efficiency of 12.93%, which is promising when compared with the solar cell already reported. The proposed structure will provide the platform for further development of low cost and efficient multijunction thin-film amorphous solar cell technology.

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Section: Resultssupporting

confidence: 61%

Section: Resultsmentioning

confidence: 99%

Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Mehmood

Tauqeer

2017

IET Circuits, Devices & Syst

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“…These parameters were obtained by the lower (5 sccm) silane gas flow and with 25% ammonia gas fraction. A similar trend was found by Vet et al [ 44 ] who deposited SiNx:H layers by the same method, varying the gas ratio of silane while the amount of ammonia gas was fixed. In accordance with the results of Jasruddin et al, they have found that while the silane gas flow was decreased, the optical band gap was increased.…”

Section: Chemical Vapor Depositionsupporting

confidence: 83%

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Hegedűs

Balázsi

2021

Materials

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Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization in several industries, from solar and semiconductor to coated glass production. The wide bandgap (~5.2 eV) of thin films allows for its optoelectronic application, while the SiNx layers could act as passivation antireflective layers or as a host matrix for silicon nano-inclusions (Si-ni) for solar cell devices. In addition, high water-impermeability of SiNx makes it a potential candidate for barrier layers of organic light emission diodes (OLEDs). This work presents a review of the state-of-the-art process techniques and applications of SiNx and SiNx:H thin films. We focus on the trends and latest achievements of various deposition processes of recent years. Historically, different kinds of chemical vapor deposition (CVD), such as plasma enhanced (PE-CVD) or hot wire (HW-CVD), as well as electron cyclotron resonance (ECR), are the most common deposition methods, while physical vapor deposition (PVD), which is primarily sputtering, is also widely used. Besides these fabrication methods, atomic layer deposition (ALD) is an emerging technology due to the fact that it is able to control the deposition at the atomic level and provide extremely thin SiNx layers. The application of these three deposition methods is compared, while special attention is paid to the effect of the fabrication method on the properties of SiNx thin films, particularly the optical, mechanical, and thermal properties.

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“…This material has a wide optical band gap (1.7 eV to 2 eV), low growth temperature (~ 200 o C) and can be grown on glass substrates that are cheap and abundant [1]. In addition, a-Si:H also has a high absorption capability in the visible light spectrum [2]. However, the efficiency of a-Si:H-based solar cells is still smaller than the efficiency of crystalline silicon and some other solar cells [3].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation on Effects of TCO Work Function on Performance of a-Si:H Solar Cells

Sholih

Hamdani

Wicaksono

et al. 2019

MSF

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In this paper, we have investigated the effect of the work function of transparent conducting oxides (TCO) on the performance of a-Si:H p-i-n solar cells, including open circuit voltage (VOC), short circuit current (JSC), fill factor (FF) and conversion efficiency, using AFORS-HET software. The simulation has focused on two layers: front contact work function (ΦTCO-front) and back contact work function (ΦTCO-back) with various band from 4.7 eV to 5.3 eV and 4.2 eV to 4.9 eV respectively. From the simulation results, we know that the work function of TCO greatly affects the performance of solar cells such as Voc, Jsc, FF and conversion efficiency. By optimization, we arrive at results for Voc, Jsc, FF and conversion efficiencies of 0.88 V, 8.95 mA / cm2, 65% and 5.1% respectively. This result is obtained on ΦTCO-front 5.2 eV. When ΦTCO-front 5.2 eV, the value of VOC, FF and conversion efficiency has been saturated, while the value of the J sc actually begins to decrease. Furthermore, when the ΦTCO - back is 4.3 eV, we get the best results for VOC, Jsc, FF and conversion Efficiency of 0.9 V, 8.96 mA / cm2, 73 % and 5.9 % respectively. When ΦTCO-back 4.3 eV, the value of VOC, FF and conversion efficiency begins to decrease, while the value of the Jsc does’t change significantly. These optimizations may help in producing low cost high efficiency p-i-n solar cells experimentally.

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Comparison of a-SiC:H and a-SiN:H as candidate materials for a p-i interface layer in a-Si:H p-i-n solar cells

Cited by 9 publications

References 13 publications

Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer

Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications

Numerical Simulation on Effects of TCO Work Function on Performance of a-Si:H Solar Cells

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