Phase Change Memory

Wong, Hang; Raoux, Simone; Kim, Sang-Bum; Liang, Jiale; Reifenberg, John P.; Rajendran, Bipin; Asheghi, Mehdi; Goodson, Kenneth E.

doi:10.1109/jproc.2010.2070050

Cited by 1,532 publications

(829 citation statements)

References 122 publications

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“…17,18,25,28 Moreover, synaptic weight modulation is mainly by engineering the pulse width and height by overlapping pulses, rather than frequency and relative timing of the spikes that is utilised in biological systems. However, three terminal synaptic devices, similar to biological neural systems, are able to realise both signal transmission and learning functions, where signal transmission is carried via the channel medium and synaptic weights are modulated independently via the gate terminals.…”

Section: Introductionmentioning

confidence: 99%

Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

Pillai

Souza

2017

ACS Appl. Mater. Interfaces

133

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Section: Introductionmentioning

confidence: 99%

Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

Pillai

Souza

2017

ACS Appl. Mater. Interfaces

133

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“…In particular, phase change memory (PCM) has recently emerged as the most promising new nonvolatile solid-state memory technology [1][2][3] . Phase-change materials are also being investigated as building blocks of neuromorphic computing hardware [4][5][6] .…”

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confidence: 99%

Crystal growth within a phase change memory cell

2014

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In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.

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“…This orbital interaction description based on the LDA electronic structures is further simplified to an ionic model [14][15][16][17][18][19] that the Fe donates two and three electrons upon substitution of Ge and Sb, respectively, in order to form bonds with Te. The resulting electronic configurations of Fe 2+ and Fe 3+ ion are 3d 6 and 3d 5 , respectively. Therefore, magnetic moments (total) of 4μB and 5μB, respectively, are expected.…”

Section: Resultsmentioning

confidence: 99%

“…Each of them often requires unique storage medium. One exception is the wide application of phase change materials (PCMs) like GexSbyTeZ (GST) in both the optical memory [1,2] and random access memory [3][4][5]. PCMs are well known for fast and reversible switching of both optical and electrical properties by phase change between their crystalline and amorphous phases [6].…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

Hong

Pei

Shi

2016

Journal of Elec Materi

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Fe doped GST has shown experimentally the ability to alter its magnetic properties by phase change. In this work, we use screened exchange hybrid functional to study the single neutral substitutional 3d transition metal (TM) in crystalline GeTe and GeSb2Te4. By curing the problem of local density functional (LDA) such as over delocalization of the 3d states, we find that Fe on Ge/Sb site has its majority d states fully occupied while its minority d states are empty, which is different than previous predicted electronic configuration by LDA. From early transition metal Cr to heavier Ni, the majority 3d states are gradually populated until fully occupied and then the minority 3d states begin to be filled. In order to study the magnetic contrast, we use lower symmetry crystalline GeTe and GeSb2Te4 as the amorphous phases, respectively, which has been proposed to model the medium range disordering. We find that only Co substitution in r-GeSb2Te4 and s-GeSb2Te4 shows magnetic contrast. The experimental magnetic contrast for Fe doped GST may be due to additional TM-TM interaction, which is not included in our model. It can also be possible that these lower symmetry crystalline models are not sufficient to characterize the magnetic properties of real 3d TM doped amorphous GST.

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Phase Change Memory

Cited by 1,532 publications

References 122 publications

Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

Crystal growth within a phase change memory cell

Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

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