Phase change memory for synaptic plasticity application in neuromorphic systems

Sousa, V.; Perniola, L.; Vuillaume, D.; DeSalvo, B.

doi:10.1109/ijcnn.2011.6033278

Cited by 20 publications

(14 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These conditions of con-ductance modulation and of memory effect can be fulfilled by the class of devices known as resistive memories. 20 Several types of unipolar and bipolar resistive memory technologies such as phase change memory (PCM), [21][22][23] conductive-bridge (CBRAM) or programmable-metallization cell (PMC), 24,25 and oxide-resistive (OXRAM) memory 26 have been demonstrated as suitable candidates for synaptic applications.…”

mentioning

confidence: 99%

Physical aspects of low power synapses based on phase change memory devices

Suri

Bichler

Querlioz

et al. 2012

Journal of Applied Physics

Self Cite

127

115

View full text Add to dashboard Cite

In this work, we demonstrate how phase change memory (PCM) devices can be used to emulate biologically inspired synaptic functions in particular, potentiation and depression, important for implementing neuromorphic hardware. PCM devices with different chalcogenide materials are fabricated and characterized. The asymmetry between the potentiation and depression behaviors of the PCM is stressed. Detailed multi-physical simulations are performed to study the underlying physics of the synaptic behavior of PCM. A versatile behavioral model and a multi-level circuitcompatible model are developed for system and circuit-level neuromorphic simulations. We propose a unique low-power methodology named the 2-PCM Synapse, to use PCM devices as synapses in large scale neuromorphic systems. To show the strength of our proposed solution, we efficiently simulated fully connected feed-forward spiking neural network capable of complex visual pattern extraction from real world data. V C 2012 American Institute of Physics.

show abstract

mentioning

confidence: 99%

Physical aspects of low power synapses based on phase change memory devices

Suri

Bichler

Querlioz

et al. 2012

Journal of Applied Physics

Self Cite

127

115

View full text Add to dashboard Cite

show abstract

“…30), thus having substantially the same resistance values; nevertheless these states remain distinct since it takes different amounts of energy (i.e., different number of subsequent excitation pulses) to transform each different state in the plateau region to the SET state (or to a resistance below the decision level). Thus, we are not storing information in different resistance levels and are not using the same scheme as proposed for multi‐level PCM memories31–34 or for phase‐change based synaptic‐like functionality 19–21. Indeed, a perfect accumulator would have only two‐levels of resistance, one above the decision level for all states from state‐0 to state‐( n ‐1) of a base‐ n system, and one below the decision level for state‐n.…”

Section: Resultsmentioning

confidence: 99%

“…(although some of these transistors, typically four or five,43 are used to implement comparator‐type amplifiers, which are also used in our design of Figure 5). The fact that phase‐change cells have also recently been shown to be capable, by using the multi‐level resistance regime, of emulating a synaptic‐like response19–21 means that it may well be possible to design and build systems in which both neuronal and synaptic‐like responses are provided by phase‐change devices (operating respectively in the accumulation and multi‐level resistance regimes).…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, it is only very recently that a detailed understanding has been achieved of what makes a true phase‐change material, and why some seemingly similar materials display technologically useful phase‐change behavior but others do not, thus allowing the recent development of a set of design rules for what constitutes a phase‐change material 14. One of the most extensively studied phase‐change materials, and the one that we use in this work, is the ternary alloy Ge 2 Sb 2 Te 5 which has been used for optical disk memories,15 scanning‐probe based storage,16–18 the fabrication of synaptic mimics19–21 and, perhaps its most widely known recent application, the development of binary non‐volatile electrical phase‐change memories (PCMs) 22–26. For binary storage, a PCM cell is switched between amorphous and crystalline phases (and back again) using single pulses.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

Wright

Hosseini

Diosdado

2012

Adv Funct Materials

302

234

View full text Add to dashboard Cite

Historically, the application of phase-change materials and devices has been limited to the provision of non-volatile memories. Recently, however, the potential has been demonstrated for using phase-change devices as the basis for new forms of brain-like computing, by exploiting their multilevel resistance capability to provide electronic mimics of biological synapses. Here, a different and previously under-explored property that is also intrinsic to phase-change materials and devices, namely accumulation, is exploited to demonstrate that nanometer-scale electronic phase-change devices can also provide a powerful form of arithmetic computing. Complicated arithmetic operations are carried out, including parallel factorization and fractional division, using simple nanoscale phase-change cells that process and store data simultaneously and at the same physical location, promising a most effi cient and effective means for implementing beyond von-Neumann computing. This same accumulation property can be used to provide a particularly simple form phase-change integrate-and-fi re "neuron", which, by combining both phase-change synapse and neuron electronic mimics, potentially opens up a route to the realization of all-phase-change neuromorphic processing.

show abstract

“…In contrast, to switch the HRS cell to LRS (i.e., set operation), a relatively long and moderate pulse is required to heat the GST between the temperature for crystallization (≈350 °C) and melting (≈610 °C). The PCM can also be operated as an analog memory with continuous conductance states to imitate the synaptic plasticity for neuromorphic applications …”

Section: Inorganic Phase‐change Memoriesmentioning

confidence: 99%

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

Sung

Kim

et al. 2019

Adv Materials Technologies

View full text Add to dashboard Cite

The latest progresses in software engineering such as cloud computing, big data analysis, and machine learning have accelerated the emergence of advanced intelligent systems (AIS). However, the current computing system has significant challenges in dealing with unstructured data (e.g., image, voice, physiological signals) because the von‐Neumann bottleneck induces latency and power consumption issues. Neuromorphic computing, which imitates the behaviors of neuron and synapse within the biological neural network, is considered a promising solution beyond von‐Neumann architecture, since its collocated structure of processor and memory enables parallel processing of unstructured data with remarkable efficiency. Memristors are considered as next‐generation nonvolatile memory devices due to fast speed, low power, and excellent scalability. However, a low reliability and leakage current issues remain as obstacle to the commercialization of memristors. Memristive devices have been widely investigated as a strong candidate for artificial synapses since their resistance modulation characteristics under electrical stimulus are analogous to the plasticity of the brain synapse. Although emulation of synaptic behavior by single memristor cells is demonstrated by many researchers, the development of fully functional memristive neural network requires further investigations. This paper introduces the recent advances and developments in the field of inorganic‐based unconventional memristive devices for future AIS applications.

show abstract

Phase change memory for synaptic plasticity application in neuromorphic systems

Cited by 20 publications

References 24 publications

Physical aspects of low power synapses based on phase change memory devices

Physical aspects of low power synapses based on phase change memory devices

Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

Contact Info

Product

Resources

About