2012
DOI: 10.1063/1.4749411
|View full text |Cite
|
Sign up to set email alerts
|

Physical aspects of low power synapses based on phase change memory devices

Abstract: In this work, we demonstrate how phase change memory (PCM) devices can be used to emulate biologically inspired synaptic functions in particular, potentiation and depression, important for implementing neuromorphic hardware. PCM devices with different chalcogenide materials are fabricated and characterized. The asymmetry between the potentiation and depression behaviors of the PCM is stressed. Detailed multi-physical simulations are performed to study the underlying physics of the synaptic behavior of PCM. A v… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

2
117
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
8
2

Relationship

2
8

Authors

Journals

citations
Cited by 127 publications
(119 citation statements)
references
References 48 publications
2
117
0
Order By: Relevance
“…The black curve shows one representative cycle of the total ~2300 cycles that were applied (grey curves). These measurements show the possibility of reaching many intermediate levels with short pulses during the SET process (between 3 and 5 V), while a stable state is more difficult to obtain during RESET, which dramatically decreases conductivity above 5 V. Asymmetry between SET and RESET modes is typical of dynamic filamentary behavior, and constitutes a general limitation learning schemes must address38.…”
Section: Resultsmentioning
confidence: 96%
“…The black curve shows one representative cycle of the total ~2300 cycles that were applied (grey curves). These measurements show the possibility of reaching many intermediate levels with short pulses during the SET process (between 3 and 5 V), while a stable state is more difficult to obtain during RESET, which dramatically decreases conductivity above 5 V. Asymmetry between SET and RESET modes is typical of dynamic filamentary behavior, and constitutes a general limitation learning schemes must address38.…”
Section: Resultsmentioning
confidence: 96%
“…In all the following simulations, we present less peripheral circuit details but pay more attention to the influence of dynamic range and precision of memristor device, which are the two key points narrowing the gap between memristive system and HCSM model. Based on the real memristor data in Figure S1, as well as some existing physical models and behavioral models of the memristor (Strukov et al, 2008; Yang et al, 2008; Guan et al, 2012a; Suri et al, 2012; Deng et al, 2015), we build an iron oxide memristor model whose synaptic behavior shows excellent agreement with the real device experiments (Figure S1D). Furthermore, we use SPICE (a standard circuit simulator) to verify the proposed network model of HCSM shown in Figure 3 and Figure S4.…”
Section: Methodsmentioning
confidence: 88%
“…Without an effectively theoretical model, researchers may have to spend tremendous computational and experimental resources to establish the viable technological path towards the success of building PCM-based neurons and synapses. To achieve this goal, Suri et al first proposed a behaviour model to simulate the LTP and LTD behaviours of PCMs using the Ge 2 Sb 2 Te 5 (GST) and GeTe medium [9092]. In Suri’s model, the conductances of GST and GeTe medium are considered as the synapse weight which can be therefore modified through either ‘SET’ process that corresponds to LTP or ‘RESET’ process indicating LTD.…”
Section: Reviewmentioning
confidence: 99%