Phase Change Materials and Superlattices for Non‐Volatile Memories

Zhang, Wei; Wuttig, Matthias

doi:10.1002/pssr.201900130

Cited by 24 publications

(13 citation statements)

References 12 publications

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“…However, the exact atomic structure as well as the switching mechanism of SSL PCMs is still under intensive debate, largely impeding the applications of this new type of materials. [83,[105][106][107]…”

Section: Structure and Bonding Naturementioning

confidence: 99%

Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

Mai

Lin

et al. 2020

Adv Funct Materials

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173

120

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Traditional von Neumann computing architecture with separated computation and storage units has already impeded the data processing performance and energy efficiency, calling for emerging neuromorphic electronic and optical devices and systems which can mimic the human brain to shift this paradigm. Material-level innovation has become the key component to this revolution of information technology. Chalcogenide phase-change material (PCM) as a well-acknowledged data-storage medium is a promising candidate to tackle this challenge. In this review, the use of PCMs to implement artificial neurons and synapses from both the electronic and optical respects is discussed, and in particular, the structure-property physics and transition dynamics that enable such brain-inspired and in-memory computing applications are emphasized. Recent advances on the atomic-level amorphous and crystalline structures, transition mechanisms, materials optimization and design, neural and synaptic devices, brain-inspired chips, and computing systems, as well as the future opportunities of PCMs, are summarized and discussed.

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Section: Structure and Bonding Naturementioning

confidence: 99%

Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

Mai

Lin

et al. 2020

Adv Funct Materials

Self Cite

173

120

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“…PCMs[15][16][17][18][19][20][21] are a special group of semiconductors, mainly comprising chalcogenides or antimonides. The flagship PCM is Ge 2 Sb 2 Te 5…”

mentioning

confidence: 99%

Phase-change materials in electronics and photonics

Zhang

Mazzarello

2019

MRS Bull.

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“…In parallel to improvements on standard PRAMs, energy-efficient memory with different working principle has been proposed and developed, named as interfacial phase-change memory (iPCM). [27][28][29][30][31][32][33][34][35] iPCM consists of chalcogenide superlattices, typically GeTe-Sb 2 Te 3 . Instead of unconstrained phase transitions between the amorphous and crystalline state, short-range phase transitions through local rearrangements, such as layer-switching between two-layered crystalline states of GST, are proposed for iPCM.…”

Section: Chalcogenidementioning

confidence: 99%

“…In parallel to improvements on standard PRAMs, energy‐efficient memory with different working principle has been proposed and developed, named as interfacial phase‐change memory (iPCM) . iPCM consists of chalcogenide superlattices, typically GeTe—Sb 2 Te 3 .…”

mentioning

confidence: 99%

Layer‐Switching Mechanisms in Sb₂Te₃

Wang

et al. 2019

Physica Rapid Research Ltrs

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Interfacial phase‐change memory (iPCM) based on layer‐structured Ge‐Sb‐Te crystals has been recently proposed, offering an energy‐efficient implementation of nonvolatile memory cells and supplementing the development of Ge‐Sb‐Te‐based phase‐change random access memories (PRAMs). Although the working principle of iPCM is still under debate, it is believed that layer‐switching plays a role in the switching process between the low‐resistance and high‐resistance states of iPCM memory cells. However, the role of Ge in forming swapped bilayers—the key elements for layer‐switching—is not yet clarified. This work manages to achieve layer‐switching in Sb2Te3 thin films by manipulating the formation of bilayer defects using magnetron sputtering and post‐thermal annealing. By combining scanning transmission electron microscopy (STEM) experiments with density functional theory (DFT) calculations, the essential role of Sb‐Te intermixing is elucidated in stabilizing swapped bilayers at a low energy cost. In situ STEM experiments provide a real‐time and real‐space view of dynamical reconfiguration of van der Waals‐like gaps in Sb2Te3 thin films under electron‐beam irradiation. The results show that the Ge atoms are not necessary for the formation and motion of swapped bilayers, providing atomic insights on the layer‐switching mechanism in layer‐structured binary and ternary group V‐ and IV–V‐tellurides for memory applications.

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Phase Change Materials and Superlattices for Non‐Volatile Memories

Cited by 24 publications

References 12 publications

Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

Phase-change materials in electronics and photonics

Layer‐Switching Mechanisms in Sb₂Te₃

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Phase Change Materials and Superlattices for Non‐Volatile Memories

Cited by 24 publications

References 12 publications

Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

Phase-change materials in electronics and photonics

Layer‐Switching Mechanisms in Sb2Te3

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Layer‐Switching Mechanisms in Sb₂Te₃