1989
DOI: 10.1109/22.18846
|View full text |Cite
|
Sign up to set email alerts
|

Phase and amplitude characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
7
0

Year Published

1996
1996
2019
2019

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 16 publications
(7 citation statements)
references
References 16 publications
0
7
0
Order By: Relevance
“…In order to maintain some symmetry in the switch, C1 is identical to C4, R1 to R3, and L1 to L2. Lumped element circuits in the literature [16], [17] cover microstrip lines printed on a silicon substrate and so differ from this design as there is no conduction through the dielectric here.…”
Section: Silicon Switchesmentioning
confidence: 99%
“…In order to maintain some symmetry in the switch, C1 is identical to C4, R1 to R3, and L1 to L2. Lumped element circuits in the literature [16], [17] cover microstrip lines printed on a silicon substrate and so differ from this design as there is no conduction through the dielectric here.…”
Section: Silicon Switchesmentioning
confidence: 99%
“…The first switch operated by illuminated gap was reported in 1989 by Anderson et al [7]. They used GaAlAs/GaAs laser at 805 nm.…”
Section: Photoconductive Devicesmentioning
confidence: 99%
“…To demonstrate the limitations of windowing, the particular choice of algorithm to generate a time-frequency representation is a matter of convenience. We will use (14) where is the time-frequency distribution of and a semicolon is used between the time-frequency variables to Fig. 9 shows an example time-frequency representation of a signal to be propagated through our model filter: low-frequency sine wave that abruptly transitions (with broad-band noise) to a higher-frequency sine wave.…”
Section: Analytical Examplementioning
confidence: 99%