“…The development of the ISFET mimics a commercial Metal Oxide Semiconductor Field Transistor (MOSFET) in which the metal gate electrode is removed, in order to expose the underlying insulator layer to the solution. Based on ISFET, Van Der Spiegel et al 4 , introduced another structure named Extended Gate Field Effect Transistor (EGFET) which has a more flexible shape compared to ISFET, and also presents better long-term stability, since the ions from the chemical environment are excluded from any region close to the FET gate insulator 5 . Recently, several thin films have been widely used as the sensing material of the EGFET pH sensors, such as carbon nanotubes 6 , SnO 2 [7] , ZnO [8] , V 2 O 5 xerogel 9 , V 2 O 5 /HDA [10] , V 2 O 5 /WO 3 [11] , V 2 O 5 /TiO 2 [12,13] .…”