Perturbation analysis of second-order nonlinearity and its effectiveness for radiofrequency bulk acoustic wave devices

Abstract

Suppression of nonlinear signal generation in radio frequency (RF) surface and bulk acoustic wave (SAW/BAW) devices is one of the most important subjects on the RF front-end modules of recent cellular handsets. Especially, issue on 2nd order nonlinear products of BAW is well known. In this work, we succeeded in extracting the dominant parameters for 2nd order nonlinear analysis proposed by K. Hashimoto and verified that it was applicable in wide frequency range and also effective for FBAR device design. Combining the extracted nonlinear coefficients on the perturbation analysis by driving near fundamental frequency (f0) of FBAR and half resonant frequency (1/2f0) could reproduce 2nd order nonlinear characteristics in the wide frequency range, and also it was confirmed that the proposed simulations were good agreement with measurement results for various type resonators and FBAR filters.

Analysis and verification on second-order nonlinearity in radio frequency bulk acoustic wave devices employing temperature compensation films

“…The simulation technique developed by the authors 23,24,37,39,40) is applied to discuss this behavior.…”

“…Figure 5 shows, simulated H2 responses are shown with the measured H2 when driving power is set at 24 dBm. The nonlinear coefficient [38][39][40] in SiOF (χ 20 T ) is determined to fit the simulated H2 with the measured one. It is seen that the simulated H2 responses given in the red solid curves agree very well with the measured ones given in the black solid curves.…”

“…In this study, the impact of SiO 2 /SiOF on the H2 of TC-FBAR is investigated experimentally and theoretically based on perturbation analysis proposed and developed by K. Hashimoto, T. Irieda, and our group. 23,24,[37][38][39] First, we fabricate two types of TC-FBARs using SiOF as the TC layer to compare their H2 behavior with that of standard FBAR. Surprisingly, the measured H2 of the TC-FBAR is lower than the standard FBAR when the SiOF layer is inserted in the AlN layer.…”