Perspective of negative capacitance FinFETs investigated by transient TCAD simulation

Ota, Hiroyuki; Fukuda, Koichi; Ikegami, Tsutomu; Hattori, Junichi; Asai, Hidehiro; Migita, Shinji; Toriumi, Akira

doi:10.1109/iedm.2017.8268394

Cited by 27 publications

(22 citation statements)

References 7 publications

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“…A singledomain L-K theory anticipates simultaneous occurrence of reduced SS, negative DIBL, negative drain resistance (NDR) 5,66,67 and noise-suppression of the drain-current as shown in Fig. 1(c) and (d) and demonstrated experimentally in Refs.…”

Section: Most Importantly Experiments Must Be Interpreted Self-consis...mentioning

confidence: 66%

“…The renormalized L-K model has been used to interpret the subthreshold slope, negative DIBL, and NDR reported by various groups 48,53,57 . Both 3D simulation of advanced transistors 66 and compact model for 3D and 2D transistors 67 have been proposed. The model has also been used to understand the scaling consequences (e.g.…”

Section: Discussionmentioning

confidence: 99%

“…The scaling questions are device specific. For example, several groups have reported that the parasitic gate-drain capacitance of a FinFET actually improves capacitance matching and reduces subthreshold slope 66,67,75 . On the other hand, the quantum capacitance of ultra-thin body transistors may negate some of the improvement.…”

Section: Even If a Fe-de Can Be Stabilized In The Nc State Are The Di...mentioning

confidence: 99%

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A critical review of recent progress on negative capacitance field-effect transistors

Alam

2019

Applied Physics Letters

171

121

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The astounding progress of electronics in the 20 th century sometimes obscures the dramatic story of repeated reinvention of the underlying device technology. The reinventions were catalyzed by the limits of power dissipation and self-heating for the corresponding device technologies. In the 1950s, when the vacuum-tubes reached the power dissipation limits, the more power efficient bipolar transistors took over. In the 1980s, bipolar transistors were replaced by even more power efficient technology based on complementary metal-oxidesemiconductor (CMOS) field-effect transistors (FET). As power consumption, self-heating and scaling considerations threaten the scaling of CMOS at the twilight of Moore's law, it is not surprising that researchers are once again looking for a more scalable and energyefficient replacement, such as tunnel FET 1 , Nano-Electro-Mechanical (NEM)-FET 2 , spin-FET 3 , phase-FET 4 , etc. The negative capacitance field-effect transistor (NC-FET) proposed by Salahuddin and Datta 5 is a recent entry to the list.

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Section: Most Importantly Experiments Must Be Interpreted Self-consis...mentioning

confidence: 66%

Section: Discussionmentioning

confidence: 99%

Section: Even If a Fe-de Can Be Stabilized In The Nc State Are The Di...mentioning

confidence: 99%

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A critical review of recent progress on negative capacitance field-effect transistors

Alam

2019

Applied Physics Letters

171

121

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“…Device simulation was performed using the technology computer aided‐design (TCAD) simulator developed by AIST called Impulse TCAD. [ 48,49 ] Figure S8 shows a schematic of the simulated SnO channel TFT whose dimensions and material parameters are consistent with those in the experiment. The ionic liquid is simulated as a gate oxide that reproduces the capacitance observed in our experiment for the Au/DEME‐TFSI/SnO system.…”

Section: Experimental Section/methodsmentioning

confidence: 59%

Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors

et al. 2021

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Ambipolar transistor operation in SnO thin‐film transistors (TFTs) is a promising character for future practical application, such as in integrated logic devices based on oxide semiconductors, because of its ability to develop them using a single material. However, there are only a few reports that demonstrate the apparent ambipolar operation for SnO TFTs owing to the insufficient knowledge on the reasons for deterioration of device performance. Although a previous study controls the operation mode of SnO TFTs [A. W. Lee et al. Adv. Electron. Mater. 6, 200742 (2020)], an additional passivating layer is required; however, it hinders the benefits of SnO usage. In this study, we provide the mechanism of deterioration of the ambipolar character of bare SnO TFTs, that is, the origin of defect states near the valence band maximum (near‐VB defect). Comprehensive spectroscopic approaches including photoemission, X‐ray emission, and X‐ray absorption spectroscopy, reveal that near‐VB defect states originate from oxygen vacancies, existing at the surface, and also in the entire SnO film. This finding is useful to improve device performance for obtaining the ambipolar operation of SnO TFTs.

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“…We have considered the simulation methods of NC FETs using our original homemade device simulator named Impulse TCAD [19,20]. Owing to its high customizability that all device properties and all equations governing them can be defined by users, we successfully realized the simulation of NC FETs and revealed their interesting features such as reverse drain-induced barrier lowering, negative drain conductance, and fringing field effect [21][22][23]. Recently, we proposed a new simulation method taking into account nonuniform polarization fields in ferroelectrics [24].…”

Section: Introductionmentioning

confidence: 99%

Device simulation of negative-capacitance field-effect transistors with a uniaxial ferroelectric gate insulator

Hattori

Ikegami

Fukuda

et al. 2020

NOLTA

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We model the behavior of uniaxial ferroelectrics and simulate planar negativecapacitance (NC) field-effect transistors (FETs) having a gate insulating film made of a uniaxial ferroelectric. The behavior of such NC FETs strongly depends on the direction of the ferroelectric polarization axis. When the direction is away from being parallel to the ferroelectric film to some extent, the ferroelectric polarization becomes larger than the paraelectric polarization and the ferroelectric film begins to act as a negative capacitor. The NC FETs can then be switched on and off more steeply than conventional metal-oxide-semiconductor FETs. This NC effect is maximized at that moment and becomes weaker as the direction approaches perpendicular to the ferroelectric film.

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Perspective of negative capacitance FinFETs investigated by transient TCAD simulation

Cited by 27 publications

References 7 publications

A critical review of recent progress on negative capacitance field-effect transistors

A critical review of recent progress on negative capacitance field-effect transistors

Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors

Device simulation of negative-capacitance field-effect transistors with a uniaxial ferroelectric gate insulator

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