Persistent photoconductivity of InP nanowire photoconductors bridged between amorphous silicon electrodes

Sarkar, Ataur; Logeeswaran, V. J.; Kobayashi, Nobuhiko P.; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R. Stanley; Islam, Maidul

doi:10.1117/12.752679

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…Both bulk defects, such as vacancies, impurities, and surface states can collectively contribute to the long trapping of photogenerated excess carriers and manifest as a temporary boost in dark conductivity, which may exist for days or even years [316]. PPC studies have been reported for some structures, e.g., GaN thin films [311], [313], [314], [317]- [320], InGaN epitaxial films [315], GaNNWs [321], and InP NWs [322].…”

Section: Surface Traps Passivation and Persistent Photoconductivitymentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

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141

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Abstract-One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible massmanufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.

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Section: Surface Traps Passivation and Persistent Photoconductivitymentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

Self Cite

141

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Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination

Yamada

Lohn

et al. 2010

Nanotechnology

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Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the presence of a tiny Coulomb island, and its existence is possible due to the large surface depletion region created within contributing nanowires. Electrons tunnel in and out of the Coulomb island, resulting in the Coulomb staircase I-V. Applying light illumination raises the electron quasi-Fermi level and the tunneling barriers are buried, causing the Coulomb staircase to disappear.

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High performance photodetectors based on high quality InP nanowires

Yang¹,

Yang²,

Li³

et al. 2016

Chinese Phys. B

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In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A•W −1 and an external quantum efficiency of 2.8×10 5 % with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.

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Persistent photoconductivity of InP nanowire photoconductors bridged between amorphous silicon electrodes

Cited by 4 publications

References 15 publications

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination

High performance photodetectors based on high quality InP nanowires

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