Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination

Yamada, Toshio; Yamada, Hidenori; Lohn, Andrew J.; Kobayashi, Nobuhiko P.

doi:10.1088/0957-4484/22/5/055201

Cited by 14 publications

(10 citation statements)

References 35 publications

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“…The grown NWs had a diameter of 130 nm and a length of about 2 μm. In literature, nonintentionally doped InP NWs have been evaluated to be slightly n-type with electron concentrations ranging from 10 15 to 10 16 cm −3 when grown by MBE 22 and MOVPE. 23 Such unintentional doping affects the performance of optoelectronic devices and might lead to, for instance, significantly higher dark current levels as discussed below.…”

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confidence: 99%

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors

et al. 2017

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The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n-i-n InP nanowires periodically ordered in arrays. The nanowires were grown by metal-organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiO/ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.

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confidence: 99%

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors

et al. 2017

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“…For NW growth, n cm -3 that is obtained in NWs grown by MBE 35 and MOVPE 21 , we added DEZn during growth of the nominal i-segment comprising the QDiscs. Detailed growth parameters can be found in Ref.…”

Section: Methodsmentioning

confidence: 99%

“…The grown NWs had a diameter of 130 nm and a length of about 2.3 µm. In order to compensate for the typical residual n-doping ranging from 10 15 to10 16 cm -3 that is obtained in NWs grown by MBE35 and MOVPE 21 , we added DEZn during growth of the nominal i-segment comprising the QDiscs. Detailed growth parameters can be found in Ref [19]…”

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confidence: 99%

“…The grown NWs had a diameter of 130 nm and a length of about 2.3 μm. To compensate for the typical residual n-doping ranging from 10 15 to 10 16 cm −3 in NWs grown by MBE 37 and MOVPE, 21 we added DEZn with a molar fraction of χ DEZn = 0.5 × 10 −7 to compensate this residual n-doping during growth of the i-segment comprising the QDiscs. This molar fraction is far too low to introduce structural changes in the NWs related to the Zn incorporation, 38 wherefore both the ZB and the WZ crystal phases are present in the NWs as shown in Figure S5.…”

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confidence: 99%

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Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared

Karimi

Heurlin²,

Limpert³

et al. 2017

Nano Lett.

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Semiconductor nanowires have great potential for realizing broadband photodetectors monolithically integrated with silicon. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible, and near-infrared regions. Here, we report on the first intersubband nanowire heterostructure array photodetectors exhibiting a spectrally resolved photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3 to 20 μm is enabled by intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The intriguing optical characteristics, including unexpected sensitivity to normal incident radiation, are explained by excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed and how engineered nanowire heterostructures open up new, fascinating opportunities for optoelectronics.

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“…This phenomenon could be observed in a tunnel junction when the charging energy exceeds the thermal energy k B T, and the tunneling resistance is larger than the quantum resistance ( h e 2 = 26 k Ω). 30 In an assembly of amine coated nanoparticles, resistance is much greater than the above mentioned value. Capacitance (C) of the nanoparticles coated by the tunnel barrier is calculated using the expression C = 4πεε 0 r, 31 where ε 0 is free-space and ε is relative permittivity.…”

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confidence: 96%

Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

et al. 2016

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We have observed large tunneling Magnetoresistance (TMR) in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe3O4 nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in the current versus voltage characteristics as the charging energy exceeds the thermal energy. A similar study is also carried out with spherical nanoparticles. A 24% TMR is recorded at room temperature which increases to 41% at 180 K for spherical particles. Mössbauer spectra reveal better stoichiometry for octahedral particles which is attainable due to lesser surface disorder and strong amine coupling at the <111> facets of octahedral Fe3O4 nanoparticles. Less stoichiometric defect in octahedral nanoparticles leads to a higher value of spin polarization and therefore larger TMR in octahedral nanoparticles.

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Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination

Cited by 14 publications

References 35 publications

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors

Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared

Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

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