Persistent photoconductivity in semiconducting III-V compounds

Vavilov, V.S.; Euthymiou, P.C.; Zardas, G.E.

doi:10.3367/ufnr.0169.199902e.0209

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…Both models are complementary and closely related to each other, allowing qualitative interpretation of the observed experimental results on LR and RC. The data presented in papers [2][3][4][5][6] devoted to the nonequilibrium photoconductivity of irra-diated or S-doped A III B V semiconductor compounds, can be used to reveal the mechanisms resulted in LR and the states with RC.…”

Section: Introductionmentioning

confidence: 99%

Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons

Yeritsyan¹,

Grigoryan²,

Harutyunyan³

et al. 2014

JMP

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This paper presents the results of a study of long-time relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP) crystals irradiated by 50 MeV electrons. A manifold increase in photosensitivity and quenching of residual conductivity was found as a result of irradiation. It is shown that LR in GaP is due to disordered regions (generated by electron irradiation) which have conductivity close to self one. The Fermi level in the disordered regions is determined by which is located deep in the forbidden band (Е е − 1.0 eV). LR effect is mainly explained by a spatial separation of electrons and holes, recombination of which is prevented by potential barriers. The observed increase in conductivity is associated with the increase in the concentration of minority carriers as well as with increase of the Hall mobility at the sample illumination.

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