“…A new γ-phase Ag x Ga x Ge 1– x Se 2 that belonged to the Fdd2 space group ( x = 0.25) was discovered when investigating the AgGaSe 2 -GeSe 2 phase diagram . The experimental band gaps of Ag x Ga x Ge 1– x Se 2 ( x = 0.333, 0.25, 0.2, 0.167) are 2.37, 2.37, 2.4, and 2.42 eV, respectively, , which fall in between AgGaS 2 (2.73 eV) and AgGaSe 2 (1.80 eV). , The nonlinear coefficients measured by second harmonic generation (SHG) are, respectively, d 31 = 33.4 pm/V; d 32 = 15.6 pm/V for AgGaGe 3 Se 8 , and d 31 = 25 pm/V; d 32 = 10.3 pm/V for AgGaGe 5 Se 12 . , The LDT of AgGaGe 5 Se 12 crystal exceeds 80 GW/cm 2 (50 fs, 1400 nm pulses), and the surface laser-induced damage threshold (LIDT) is about 220 MW/cm 2 (1.06 μm, 15 ns, 1 Hz) . AgGaGe 3 Se 8 and AgGaGe 5 Se 12 both have high NLO coefficient and LDT values which satisfy the application requirements for promising mid-IR NLO crystals.…”