Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells

Гавриленко, В. И.; Иконников, А. В.; Криштопенко, С. С.; Lastovkin, A. A.; Maremyanin, K. V.; Sadofyev, Yu. G.; Spirin, K. E.

doi:10.1134/s106378261005012x

Cited by 26 publications

(23 citation statements)

References 12 publications

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“…Previously, we have employed this approximation for a quantitative interpretation of our previous experimental results on CR (Refs. 25 and 33) and magnetotransport [39][40][41][42] in InAs/AlSb QWs as well. Moreover, it can be shown that our approximation for the single-electron states can be reduced to the model proposed by Pfeffer and Zawadzki 43 for the spin splitting in the conduction band in n-type QWs based on narrow-gap materials.…”

Section: A Single-electron Statesmentioning

confidence: 88%

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Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Криштопенко

Иконников

Орлита

et al. 2015

Journal of Applied Physics

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We report observation of electron-electron (e-e) interaction effect on cyclotron resonance (CR) in InAs/AlSb quantum well heterostructures. High mobility values allow us to observe strongly pronounced triple splitting of CR line at noninteger filling factors of Landau levels. At magnetic fields, corresponding to > 4, experimental values of CR energies are in good agreement with single-electron calculations on the basis of eight-band k Á p Hamiltonian. In the range of filling factors 3 < < 4 pronounced, splitting of CR line, exceeding significantly the difference in single-electron CR energies, is discovered. The strength of the splitting increases when occupation of the partially filled Landau level tends to a half, being in qualitative agreement with previous prediction by MacDonald and Kallin [Phys. Rev. B 40, 5795 (1989)]. We demonstrate that such behaviour of CR modes can be quantitatively described if one takes into account both electron correlations and the mixing between conduction and valence bands in the calculations of matrix elements of e-e interaction. V

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Section: A Single-electron Statesmentioning

confidence: 88%

“…The samples were nominally undoped and amount of electrons in the QW was supplied from surface donors of the GaSb cap layer. 40,41 Parameters of the samples are given in Table I.…”

Section: Methodsmentioning

confidence: 99%

Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Криштопенко

Иконников

Орлита

et al. 2015

Journal of Applied Physics

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“…Our experimental data clearly evidence a gapless state. We also measure cyclotron resonance (CR) at different electron concentrations varied by bipolar persistent photoconductivity (PPC) inherent to InAs-based QWs [27][28][29][30][31][32][33][34]. The latter acts as an optical gating and allows changing the electron concentration in the QW by several times.…”

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confidence: 99%

Massless Dirac fermions in III-V semiconductor quantum wells

et al. 2019

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We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the Γ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity vF = 1.8·10 5 m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.arXiv:1812.02468v2 [cond-mat.mes-hall]

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“…We attribute the optical tunability to the interplay of negative persistent photoconductivity and the buildup of photogenerated charge carriers on the surface and substrate side of the device, respectively. Quantum well heterostructures composed of 6.1Å family semiconductors exhibit positive and negative persistent photoconductivity, depending on the utilized material, material composition, heterostructure layout, and photon energy [32][33][34][35][36][37][38][39][40]. In Refs.…”

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confidence: 99%

“…In Refs. [33,36,37], the authors study the evolution from positive to negative photoconductivity 041301-3 of AlSb/InAs/AlSb quantum wells dependent on the incident light energy. For photon energies above ≈1.55 eV, the authors show negative persistent photoconductivity which they attribute to photogenerated holes in the GaSb cap.…”

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confidence: 99%

Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells

et al. 2018

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We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure. Under constant optical excitation, the majority charge carrier type switches from electron to hole. Within the majority charge carrier type transition, the coexisting minority charge carrier contribution indicates electron-hole hybridization with a nontrivial topological insulating phase. The optical tuning is attributed to the negative photoconductivity of antimonide materials in combination with a persistent charge carrier buildup of photogenerated charges at the surface and substrate side of the device, respectively. Our study of the tuning of an InAs/GaSb double quantum well heterostructure reveals that an electro-optical switching is possible and paves the way to an optical control of the phase diagram of InAs/GaSb topological insulators.

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Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells

Cited by 26 publications

References 12 publications

Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Massless Dirac fermions in III-V semiconductor quantum wells

Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells

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