Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Abstract

We report observation of electron-electron (e-e) interaction effect on cyclotron resonance (CR) in InAs/AlSb quantum well heterostructures. High mobility values allow us to observe strongly pronounced triple splitting of CR line at noninteger filling factors of Landau levels. At magnetic fields, corresponding to > 4, experimental values of CR energies are in good agreement with single-electron calculations on the basis of eight-band k Á p Hamiltonian. In the range of filling factors 3 < < 4 pronounced, splitting of CR line, exceeding significantly the difference in single-electron CR energies, is discovered. The strength of the splitting increases when occupation of the partially filled Landau level tends to a half, being in qualitative agreement with previous prediction by MacDonald and Kallin [Phys. Rev. B 40, 5795 (1989)]. We demonstrate that such behaviour of CR modes can be quantitatively described if one takes into account both electron correlations and the mixing between conduction and valence bands in the calculations of matrix elements of e-e interaction. V

Modeling of the scattering mechanisms of a two-dimensional Fermi electron gas in the heterostructure InAs/AlSb/InAs

“…We do not consider it since a quantum well based on the AlSb/InAs/AlSb compound has a rectangular potential relief. This fact follows from a self-consistent solution of the Schrödinger equation and Poisson electroneutrality and is also confirmed in [10]. It is worth noting that the bending of the zones in the barrier and in the quantum well is insignificant.…”

“…To confirm this assumption, let us present graphs of the dependences of the amplitude of the Shubnikov-de Haas oscillations on the inverse magnetic field [9,10]. The heterostructure AlSb( -Te)/InAs/( -Te)AlSb dynamics broadening of quantization depends on the scattering frequency DEG roughness heterojunction InAs/AlSb which is most intensively implemented at sites 1 and 2 (Fig.…”

“…Formula (19) is applicable in our case since the InAs/AlSb/InAs heterostructure is considered in the limit of slowly varying potentials (adiabatic approximation) and in the limit of low temperatures. Matrix static polarization and form factor are expressed, respectively [10] (16)…”

Observation of topological phase transition by terahertz photoconductivity in HgTe‐based transistors

“…The presence of nonparabolicity breaks Galilean invariance, making the magneto-optical response sensitive to many-body effects. This is well-established for various 2D systems on the basis of graphene [28,29], bilayer graphene [30,31], and narrow-gap III-V semiconductors [32,33]. In the case of inverted HgTe QWs, many-body interaction results in non-zero contribution of electronic states at zeromode LLs to the FET channel's conductivity, allowing us to observe the absorption peak at B = B c in the case when Fermi level lies far from conduction band bottom.…”

Циклотронный резонанс дираковских фермионов в квантовых ямах InAs/GaSb/InAs

“…Расчеты собственных энергий и волновых функций носителей заряда в КЯ проводились методом разложе-ния огибающих волновых функций по плоским волнам. Для зонных параметров материалов в трехслойных КЯ InAs/GaSb с внешними барьерами AlSb использовались значения, представленные в работах [11][12][13].…”