2016
DOI: 10.1063/1.4973497
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Perpendicularly magnetized YIG-film resonators and waveguides with high operating power

Abstract: We propose a novel technique for building YIG film-based resonators and waveguides for high power operating microwave devices. Our approach is based on the effect of total internal reflection (TIR) at the interface between the non-metalized and metalized regions of YIG film, which take place for forward volume magnetostatic spin waves in perpendicularly magnetized YIG films. Prototype resonators and waveguides were designed, fabricated, and tested. The obtained experimental data demonstrate high quality factor… Show more

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Cited by 3 publications
(4 citation statements)
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“…[10][11][12][13][14] In addition to low-damping, the high-frequency measurements of the thin film and 25 µm disks have Quality (Q) factors, f ∆ f , of over 3,700, competitive with Q factors for YIG thin films. 48 Retaining ultra-low damping and high Q in patterned V [TCNE] x for features as small as 25 µm and as large as millimeters, both relevant length scales for many magnonic cavity applications, 3,14,[49][50][51][52] combined with the flexibility to deposit on most inorganic substrates, positions V [TCNE] x to complement YIG in magnonic and magnetoelectric devices where integration of GGG or high-temperature annealing steps is limiting, such as for small form factors and on-chip integration. In summary, this work demonstrates a method for patterning the ferrimagnetic coordination compound vanadium tetracyanoethylene.…”
mentioning
confidence: 99%
“…[10][11][12][13][14] In addition to low-damping, the high-frequency measurements of the thin film and 25 µm disks have Quality (Q) factors, f ∆ f , of over 3,700, competitive with Q factors for YIG thin films. 48 Retaining ultra-low damping and high Q in patterned V [TCNE] x for features as small as 25 µm and as large as millimeters, both relevant length scales for many magnonic cavity applications, 3,14,[49][50][51][52] combined with the flexibility to deposit on most inorganic substrates, positions V [TCNE] x to complement YIG in magnonic and magnetoelectric devices where integration of GGG or high-temperature annealing steps is limiting, such as for small form factors and on-chip integration. In summary, this work demonstrates a method for patterning the ferrimagnetic coordination compound vanadium tetracyanoethylene.…”
mentioning
confidence: 99%
“…Recently, a similar structure was used by Balinskiy et al . for a different application 30 . Figure 5(a) and (b) illustrate schematic diagrams of majority gates, in which the input junction was composed of core-cladding waveguide (See Methods).…”
Section: Discussionmentioning
confidence: 99%
“…This property could lead to a new paradigm in the area of computing, allowing to create smaller low-power devices compared to common CMOS-technology [1,2,3,4,5,6,7,8]. An essential part in the 5 development of such circuits is the ability to locally control the SW amplitude.…”
Section: Introductionmentioning
confidence: 99%
“…As a result of a static magnetization, the dispersion relation as well as the excitation strength depend on the SW direction. On the 15 contrary, the out-of-plane configuration, leading to the magneto-static forward volume mode (MSFVM), offers a strong SW excitation strength with the possibility to send SWs in arbitrary directions and avoid non-reciprocity effects in SW interferometer compared to the Damon-Eshbach SWs [20, 21,22]. Magnetic simulations has proven that the out-of-plane magnetized majority gate 20 can overcome the limitation of anisotropic in-plane magnetized majority gates due to the high spin-wave transmission [23], which makes MSFVM SWs with the perpendicularly magnetized configuration suitable for SW logic devices free of non-reciprocity effects.…”
Section: Introductionmentioning
confidence: 99%