Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1−xMnxAs films

Liu, X.; Lim, W. L.; Titova, Lyubov V.; Dobrowolska, M.; Furdyna, J. K.; Kutrowski, M.; Wójtowicz, T.

doi:10.1063/1.2043233

Cited by 85 publications

(67 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the slope of the linear fit of resonance field to frequency in Fig. 2(b), we obtain γ = 2.55 ± 0.14 MHz/G, corresponding to g = 1.82 ± 0.1, close to previously reported values 24,25 . We find that 4πM s − H a⊥ ≈ 5.82 kG.…”

Section: Resultssupporting

confidence: 60%

Local magnetic characterization of (Ga,Mn)As continuous thin film using scanning probe force microscopy

et al. 2012

View full text Add to dashboard Cite

We report spatially resolved measurements of the saturation magnetization, anisotropy field, and g-factor of a (Ga,Mn)As thin film using two different scanning probe techniques: Ferromagnetic Resonance Force Microscopy (FMRFM) and probe-induced Magnetic Force Microscopy (MFM). We find that the magnetic properties of the film are uniform within our 1 µm lateral resolution. We further demonstrate that these two powerful and complementary magnetic characterization approaches, the former dynamic and the latter static, obtain measurements of magnetic properties that are in excellent agreement with one another enabling enhanced quantitative reliability.

show abstract

Section: Resultssupporting

confidence: 60%

Local magnetic characterization of (Ga,Mn)As continuous thin film using scanning probe force microscopy

et al. 2012

View full text Add to dashboard Cite

show abstract

“…This simple model has been astoundingly successful in describing a large variety of magnetization-related phenomena in (Ga,Mn)As. Under the given experimental conditions described above, domain nucleation and expansion, which have been shown to accompany in-plane and perpendicular magnetization-reversal processes, 11,13 are expected to play only a minor role. Accordingly, we may write the magnetization as a vector M = M m where M denotes its magnitude and the unit vector m its direction.…”

Section: Theoretical Overviewmentioning

confidence: 99%

“…Considerable progress has been made in understanding its structural, electronic, and magnetic properties. In particular, anisotropic magnetoresistance (AMR), 4,5,6,7,8,9 planar Hall effect (PHE), 10 and magnetic anisotropy (MA), 11,12,13,14,15,16,17 have been identified as characteristic features, making (Ga,Mn)As potentially suitable for field-sensitive devices and non-volatile memories. These properties have been shown to be governed by several parameters, such as Mn concentration, hole density, strain, or temperature.…”

Section: Introductionmentioning

confidence: 99%

Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and(113)A-oriented(Ga,Mn)As

et al. 2006

View full text Add to dashboard Cite

General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They are applied to strained (Ga,Mn)As films, grown on (001)-and (113)A-oriented GaAs substrates, where the resistivities are theoretically and experimentally studied for magnetic fields rotated within various planes parallel and perpendicular to the sample surface. We are able to model the measured angular dependences of the resistivities within the framework of a single ferromagnetic domain, calculating the field-dependent orientation of the magnetization by numerically minimizing the free-enthalpy density. Angle-dependent magnetotransport measurements are shown to be a powerful tool for probing both anisotropic magnetoresistance and magnetic anisotropy. The anisotropy parameters of the (Ga,Mn)As films inferred from the magnetotransport measurements agree with those obtained by ferromagnetic resonance measurements within a factor of two.

show abstract

“…[21][22][23] In this study, we follow this track by adopting the following phenomenological formula:…”

Section: Experimental Magnetic Anisotropiesmentioning

confidence: 99%

Strain control of magnetic anisotropy in (Ga,Mn)As microbars

et al. 2011

View full text Add to dashboard Cite

We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement with finite element simulations. SQUID magnetization measurements are performed to study the control of magnetic anisotropy in (Ga,Mn)As by the lithographically induced strain relaxation of the microbars. Microscopic theoretical modeling of the anisotropy is performed based on the mean-field kinetic-exchange model of the ferromagnetic spin-orbit coupled band structure of (Ga,Mn)As. Based on the overall agreement between experimental data and theoretical modelling we conclude that the micropatterning induced anisotropies are of the magnetocrystalline, spin-orbit coupling origin.

show abstract

Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1−xMnxAs films

Cited by 85 publications

References 39 publications

Local magnetic characterization of (Ga,Mn)As continuous thin film using scanning probe force microscopy

Local magnetic characterization of (Ga,Mn)As continuous thin film using scanning probe force microscopy

Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and(113)A-oriented(Ga,Mn)As

Strain control of magnetic anisotropy in (Ga,Mn)As microbars

Contact Info

Product

Resources

About