Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing

Yang, June‐Mo; Choi, Eugene; Kim, Soyeon; Kim, Jeong-Hoon; Park, Jin‐Hong; Park, Nam‐Gyu

doi:10.1039/c8nr09918a

Cited by 136 publications

(97 citation statements)

References 71 publications

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“…In this section, we pay our attention to recent progress in OIP‐based resistive switching memories 37,52,58,215‐225 . Previous studies have revealed that two mechanisms, ionic migration and charge trapping/detrapping, can account for the resistive switching behaviors of OIPs, 218,219 which guided a series of materials design.…”

Section: Organic‐inorganic Hybrid Materials For Resistive Memorymentioning

confidence: 99%

“…More interestingly, Yang et al also studied a lead‐free perovskite MA 3 Sb 2 Br 9 (Figure 30D), which not only implemented multilevel storage but also succeeded to mimic biological synaptic functions (Figure 30E). 225 They prepared an Ag/PMMA/MA 3 Sb 2 Br 9 /ITO memristor device, wherein the PMMA layer was inserted to suppress the exposure of MA 3 Sb 2 Br 9 film to oxygen and moisture in air. This memristor exhibited outstanding artificial synaptic characteristics, such as excitatory postsynaptic current, inhibitory postsynaptic current, long‐term potentiation, long‐term depression, and spike‐timing‐dependent plasticity (Figure 30F), which are promising for neuromorphic computing.…”

Section: Organic‐inorganic Hybrid Materials For Resistive Memorymentioning

confidence: 99%

Section: Organic‐inorganic Hybrid Materials For Resistive Memorymentioning

confidence: 99%

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Recent advances in organic‐based materials for resistive memory applications

Qian

Zhu

et al. 2020

InfoMat

148

142

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With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory electronics. Nevertheless, the physical limitations of conventional Si‐based binary storage systems lag far behind the ultrahigh‐density requirements of post‐Moore information storage. In this regard, the pursuit of alternatives and/or supplements to the existing storage technology has come to the forefront. Recently, organic‐based resistive memory materials have emerged as promising candidates for next‐generation information storage applications, which provide new possibilities of realizing high‐performance organic electronics. Herein, the memory device structure, switching types, mechanisms, and recent advances in organic resistive memory materials are reviewed. In particular, their potential of fulfilling multilevel storage is summarized. Besides, the present challenges and future prospects confronted by organic resistive memory materials and devices are discussed.

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Section: Organic‐inorganic Hybrid Materials For Resistive Memorymentioning

confidence: 99%

Section: Organic‐inorganic Hybrid Materials For Resistive Memorymentioning

confidence: 99%

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Recent advances in organic‐based materials for resistive memory applications

Qian

Zhu

et al. 2020

InfoMat

148

142

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“…However, under light illumination, 81.8% was achieved only after 2000 learning phases, indicating considerably improved learning and memory capability. Yang et al reported an artificial synapse on the basis of the perovskite‐related MA 3 Sb 2 Br 9 memristor, [ 94 ] which could show EPSC, inhibitory postsynaptic current (IPSC), LTP, long‐term depression (LTD), and STDP behaviors. Kim et al reported an artificial synapse on the basis of the dual‐phase (Cs 3 Bi 2 I 9 ) 0.4 −(CsPbI 3 ) 0.6 perovskite memristor, [ 109 ] which could also show EPSC, IPSC, STP, STD, LTP, LTD, STDP, and spike‐width‐dependent plasticity (SWDP) behaviors.…”

Section: Halide Perovskite Memristor Applicationsmentioning

confidence: 99%

Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Xiao

Tang

et al. 2020

Adv Materials Technologies

127

121

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The memristor is the fourth fundamental circuit element discovered after resistors, capacitors, and inductors. Although this concept has only been proposed in 1971 and confirmed in 2008, many materials with memristive properties have been found since 1962. Halide perovskites have been widely used in solar cells, and recently it has been found that they also possess good memristive properties. Different halide perovskites have been applied to memristors, including 3D organic–inorganic hybrid perovskites, 2D organic–inorganic hybrid perovskites, all‐inorganic cesium/rubidium lead halide perovskites, lead‐less and lead‐free perovskites, and halide perovskite quantum dots. Flexible and fiber‐shaped halide perovskite memristors have been fabricated. Several resistive switching mechanisms of halide perovskite memristors have been proposed, and the relationships between halide perovskite memristors and perovskite solar cells have been discussed. Based on halide perovskite memristors, light‐induced resistive switching and logic gate, high‐density and cross‐bar array data storage unit, and artificial synapse have been designed. Herein, recent advances in halide perovskite memristors are comprehensively and systematically reviewed. Finally, the current challenges and potential future directions in this field are discussed.

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“…[ 4–12 ] Of these innovative nonvolatile memories, RRAM offers low power consumption, fast response speed, long retention time, high scalability, multistate data‐storage capability, and a simple metal‐insulator‐metal structure. [ 9,13,14 ] Information storage in the RRAM is achieved by altering the resistance of its insulator. The adjustable resistance of the insulator is achieved by forming metallic or defect filaments with low resistance either by electrochemical metal dissolution or by changing the valence charge of the insulator.…”

Section: Introductionmentioning

confidence: 99%

Forming‐Free, Nonvolatile, and Flexible Resistive Random‐Access Memory Using Bismuth Iodide/van der Waals Materials Heterostructures

Kuo

et al. 2020

Adv Materials Inter

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next-generation memory devices such as ferroelectric random-access memory, magnetoresistive random-access memory, and resistive random-access memory (RRAM) have been intensively researched and developed. [4-12] Of these innovative nonvolatile memories, RRAM offers low power consumption, fast response speed, long retention time, high scalability, multistate data-storage capability, and a simple metalinsulator-metal structure. [9,13,14] Information storage in the RRAM is achieved by altering the resistance of its insulator. The adjustable resistance of the insulator is achieved by forming metallic or defect filaments with low resistance either by electrochemical metal dissolution or by changing the valence charge of the insulator. [15,16] Generally, the insulator used is either a transition metal oxide or perovskite oxide such as Sr 2 TiO 4 and Cr-doped SrZrO 3. [16,17] However, the synthesis of these materials often requires high temperatures and highly complex fabrication processes that are incompatible with flexible applications. [18,19] Furthermore, a high voltage is required to induce a soft breakdown of the oxide layer, which is detrimental to low-power operation. Lead-based perovskite has recently demonstrated great potential for the fabrication of RRAMs, because of its compact morphology, lowtemperature solution processability, and ionic-transport property. It functions analogously to the human synapse and offers flexible applications with a high on/off ratio, multistate-storage capability, and low set/reset voltage. [13-15,20-27] For example, Choi et al. fabricated an organo-lead halide perovskite RRAM with an on/off ratio of 10 6 , low set/reset voltage of 0.13 V, and four states of information storage. [25] Owing to the high absorption coefficient of perovskite, Zhou demonstrated optoelectronic devices with versatile functions such as photo-sensing, processing, and bit storage with the help of light pulses. [28] However, the structural stability of the perovskite in the air and the issue of its toxicity have led to uncertainty regarding its suitability as a commercial product. [29,30] To solve the issue of toxicity, Park et al. fabricated a zero-dimensional bismuth-based perovskite that had the crystal formula of A 3 Bi 2 I 9 and demonstrated a forming-free device by lowering the defect formation barrier with substitution of sodium into the Bi 3+ cation site. [31] Yang et al. reported forming-free resistive-switching devices Resistive switching devices based on halide perovskites exhibit promising potential in flexible resistive random-access memory (RRAM) owing to low fabrication cost and low processing temperature. However, the toxicity of these materials hinders their commercialization. Herein, bismuth iodide (BiI 3) is employed as an insulator in RRAM. A monolayer of graphene or hexagonal boron nitride (h-BN) is employed as a buffer layer to achieve van der Waals epitaxy of BiI 3 and meanwhile to prevent the intrusion of copper atoms. Thus, the film quality of the BiI 3 layer is greatly improved. Res...

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Perovskite-related (CH₃NH₃)₃Sb₂Br₉ for forming-free memristor and low-energy-consuming neuromorphic computing

Abstract: Perovskite-related (CH3NH3)3Sb2Br9 exhibits forming free properties in memristor devices and low energy consuming artificial synaptic behavior for neuromorphic computing.

Cited by 136 publications

References 71 publications

Recent advances in organic‐based materials for resistive memory applications

Recent advances in organic‐based materials for resistive memory applications

Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Forming‐Free, Nonvolatile, and Flexible Resistive Random‐Access Memory Using Bismuth Iodide/van der Waals Materials Heterostructures

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