Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Abstract

The memristor is the fourth fundamental circuit element discovered after resistors, capacitors, and inductors. Although this concept has only been proposed in 1971 and confirmed in 2008, many materials with memristive properties have been found since 1962. Halide perovskites have been widely used in solar cells, and recently it has been found that they also possess good memristive properties. Different halide perovskites have been applied to memristors, including 3D organic–inorganic hybrid perovskites, 2D organic–inorganic hybrid perovskites, all‐inorganic cesium/rubidium lead halide perovskites, lead‐less and lead‐free perovskites, and halide perovskite quantum dots. Flexible and fiber‐shaped halide perovskite memristors have been fabricated. Several resistive switching mechanisms of halide perovskite memristors have been proposed, and the relationships between halide perovskite memristors and perovskite solar cells have been discussed. Based on halide perovskite memristors, light‐induced resistive switching and logic gate, high‐density and cross‐bar array data storage unit, and artificial synapse have been designed. Herein, recent advances in halide perovskite memristors are comprehensively and systematically reviewed. Finally, the current challenges and potential future directions in this field are discussed.

Review of Interface Passivation of Perovskite Layer

“…Organic–inorganic hybrid perovskite materials exhibit excellent photoelectric properties (e.g., an adjustable band gap, a long carrier life, a long carrier diffusion length, a low exciton binding energy, a high molar extinction coefficient, low cost, and an easy preparation) and are widely used in various optoelectronic devices, such as solar cells, light-emitting diodes, photodetectors, memristors, and sensors [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 ]. Among such devices, perovskite solar cells (PSCs) have been the most frequently investigated [ 9 ].…”

Diffusive and Drift Halide Perovskite Memristive Barristors as Nociceptive and Synaptic Emulators for Neuromorphic Computing

“…Although nonvolatile memristive behavior has been observed previously in HPs with PEDOT:PSS as the HTL, most of them utilized reactive metals such as Al, Au, Ag, Cu, etc., as the ETL which served as the ion source for conductive filament formation. [ 35 ] In summary, the ion permissive PEDOT:PSS interface promotes diffusive kinetics of ions in the perovskite, while the ion source NiO x interface supports drift kinetics and enables conductive filament formation, resulting in volatile diffusive and nonvolatile drift memristive barristors, respectively.…”

Halide perovskite for low‐power consumption neuromorphic devices

“…Based on its low cost, low temperature processability, low ion mobility activity and the formation of reversible p‐i‐n structures, ion‐conducting OHP is very suitable for memristors and synaptic devices. To date, OHP based memristors have been investigated and many papers have been reported 42–45 . In recent years, many research teams have also discovered that the conduction behavior is electronic mixed with ionic transport.…”