Perovskite/GaAs-nanowire hybrid structure photodetectors with ultrafast multiband response enhancement by band engineering

Abstract

We developed a hybrid structure photodetector combining one-dimensional (1D) inorganic GaAs nanowires and two-dimensional (2D) organic perovskite materials, which can achieve various performance enhancements using a relatively simple structure. Via the optical absorption enhancement of perovskite and the type-II energy band structure formed by the heterostructure, the responsivity and detectivity of the photodetector from ultraviolet (UV) to visible (Vis) wavelengths are significantly enhanced, reaching 75 A/W and 1.49×1011 Jones, respectively. The response time of the photodetector was significantly decreased by 3 orders, from 785 ms to 0.5 ms, and the dark current was further reduced to 237 fA. A photodetector was prepared with enhanced responsivity and ultrafast response time in the multiband region from the UV to Vis wavelength. To the best of our knowledge, this is the first time to combine inorganic III-V GaAs nanomaterials with organic perovskite materials, which verifies the effective combination of inorganic and organic materials in a mixed dimension. The excellent photoelectric performance of the perovskite/GaAs-nanowire hybrid structure photodetector makes it a potential candidate material for a wide range of photoelectric applications such as multiband photodetection.

Single GaAs nanowire-based high-performance photodetectors

“…The results are displayed in Figure 6(a). Its maximum optical response is 3.65 A/W, and its detection rate D* is calculated to be 3.68×10 11 Jones, which is comparable to that of the GaAs photodetectors reported so far [13,14] .…”

Bi2O2Se Nanowire/MoSe2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel

“…(a,b) Schematic band alignment of the Bi 2 O 2 Se/MoSe 2 heterojunction after contact under light illumination at V ds = 0 and −1 V. (c,d) Photo-switching on–off curves in 300 cycles at V ds = 0 and −1 V, respectively. (e) Photovoltaic R and D * and (f) rise and decay times of typical state-of-the-art 1D/2D, 1D/3D, 2D/2D vdWs heterostructure-based photodetectors in the self-powered mode reported in the literature such as WSe 2 /ReSe 2 , GaAs/WSe 2 , SnTe/Bi 2 Se 3 , Te/CdS, Te/Bi 2 O 2 Se, MoS 2 /WSe 2 , TiS 2 /Si, WSe 2 /Gr/MoTe 2 , perovskite/GaAs, WSe 2 /In 2 O 3 , Se/ReSe 2 , Te/ReS 2 , ZnO/WSe 2 , Sb 2 Se 3 /WS 2 , SWCNT/GaAs, and Te/WS 2 …”

A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices

“…The summarized results are given in Table 1. 42,[47][48][49][50][51][52][53][54] The BiSeI/GaSe heterostructure exhibits the fastest response speed among the 1D/2D heterojunction photodetectors in the table. The remarkable performance of the BiSeI/ GaSe heterostructure can be attributed to the intrinsic electric eld present at the heterostructure interface and the stimulation from laser irradiation.…”